Recent advances in flexible solution-processed thin-film transistors for wearable electronics

LY Ma, N Soin, SN Aidit, FAM Rezali… - Materials Science in …, 2023 - Elsevier
Solution-processed thin-film transistors (TFTs) are widely explored due to their high potential
in flexible, cost-effective, large-area electronics, such as wearable electronics, sensor …

Flexible active crossbar arrays using amorphous oxide semiconductor technology toward artificial neural networks hardware

ME Pereira, J Deuermeier, C Figueiredo… - Advanced Electronic …, 2022 - Wiley Online Library
Memristor crossbar arrays can compose the efficient hardware for artificial intelligent
applications. However, the requirements for a linear and symmetric synaptic weight update …

Solution processed low-voltage metal-oxide transistor by using TiO2/Li–Al2O3 stacked gate dielectric

N Pal, U Pandey, S Biring, BN Pal - Journal of Materials Science: Materials …, 2022 - Springer
A solution processed top-contact bottom-gated SnO2 thin-film transistor (TFT) has been
fabricated using a TiO2/Li–Al2O3 bilayer stacked gate dielectric that show operating voltage …

Evaluating direct detection detectors for short-range order characterization of amorphous materials by electron scattering

A Basha, G Levi, L Houben, T Amrani, I Goldfarb… - Ultramicroscopy, 2023 - Elsevier
The introduction of direct electron detectors (DEDs) to transmission electron microscopy has
set off the 'resolution revolution', especially for cryoTEM low-dose imaging of soft matter. In …

[HTML][HTML] Dielectric multilayers impact on radiation-induced charge accumulation in highly sensitive oxide field effect transistors

C Bordoni, A Ciavatti, M Cortinhal, M Pereira… - APL Materials, 2024 - pubs.aip.org
Radiation dosimetry is crucial in many fields where the exposure to ionizing radiation must
be precisely controlled to avoid health and environmental safety issues. Among solid state …

Low voltage a-IGZO thin film transistor using tantalum oxide by thermal oxidation

ES Yu, SG Kim, SJ Kang, HS Lee, JM Lee… - Electronic Materials …, 2024 - Springer
Low voltage oxide thin-film transistors (TFTs) operating below 1.0 V were developed using a
high dielectric constant tantalum oxide produced by thermal oxidation. Thermal oxidation …

Optimizing the Crystallinity of a ZrO2 Thin Film Insulator for InGaZnO‐Based Metal–Insulator–Semiconductor Capacitors

M Nam, S Lee, H Jeong, A Yoon… - Advanced Materials …, 2024 - Wiley Online Library
The utilization of a zirconium oxide (ZrO2) thin film as the insulator in a metal–insulator–
semiconductor (MIS) capacitor to enhance the characteristics of thin‐film transistors is …

Parylene C as a multipurpose material for electronics and microfluidics

BJ Coelho, JV Pinto, J Martins, A Rovisco, P Barquinha… - Polymers, 2023 - mdpi.com
Poly (p-xylylene) derivatives, widely known as Parylenes, have been considerably adopted
by the scientific community for several applications, ranging from simple passive coatings to …

Improvement in Electrical Stability of a-IGZO TFTs Using Thinner Dual-Layer Dielectric Film

JW Kim, HK Seo, SY Lee, M Park, MK Yang, BK Ju - Metals, 2022 - mdpi.com
This study investigates the effect of gate insulators on thin-film transistors (TFTs) using an
amorphous InGaZnO4 (a-IGZO) channel layer. TFTs with single-layer Ta2O5 and dual-layer …

22‐4: Invited Paper: Fiber‐Like Oxide Thin‐Film Transistors for Large‐Area Smart Textile Systems

P Barquinha, C Figueiredo, R Igreja… - … Symposium Digest of …, 2024 - Wiley Online Library
This work demonstrates flexible and textile electronic concepts bridged to create innovative
and free form factor textile electronic systems. In particular, it focuses on oxide thin‐film …