Large spin accumulation voltages in epitaxial contacts on Ge without an oxide tunnel barrier

A Spiesser, H Saito, R Jansen, S Yuasa, K Ando - Physical Review B, 2014 - APS
Spin injection in high-quality epitaxial M n 5 G e 3 Schottky contacts on n-type Ge has been
investigated using a three-terminal Hanle effect measurement. Clear Hanle and inverted …

Magnetic Ge: Mn nanocrystals grown by MBE on insulator substrate for solar cell and photodetector applications

M Aouassa, W Alhosaini, TA Taha - Applied Surface Science, 2022 - Elsevier
In this work, we successfully grew novel dilute magnetic Ge: Mn nanocrystals (Ge: Mn NCs)
on SiO 2 thin film for metal-oxidesemiconductor (MOS) solar cell and photodetector …

Strain-induced switching between noncollinear and collinear spin configuration in magnetic films

Y Xie, Y Yuan, M Birowska, C Zhang, L Cao, M Wang… - Physical Review B, 2021 - APS
We report the temperature-dependent magnetic and structural properties of epitaxial Mn 5
Ge 3 thin films grown on Ge substrates. Utilizing density-functional theory (DFT) calculations …

Epitaxial Mn5Ge3 (100) layer on Ge (100) substrates obtained by flash lamp annealing

Y Xie, Y Yuan, M Wang, C Xu, R Hübner… - Applied Physics …, 2018 - pubs.aip.org
Mn 5 Ge 3 thin films have been demonstrated as promising spin-injector materials for
germanium-based spintronic devices. So far, Mn 5 Ge 3 has been grown epitaxially only on …

Sublayer-Enhanced Growth of Highly Ordered Mn5Ge3 Thin Film on Si(111)

I Yakovlev, I Tarasov, A Lukyanenko, M Rautskii… - Nanomaterials, 2022 - mdpi.com
Mn5Ge3 epitaxial thin films previously grown mainly on Ge substrate have been synthesized
on Si (111) using the co-deposition of Mn and Ge at a temperature of 390° C. RMS …

Magnetic reversal in Mn5Ge3 thin films: an extensive study

LA Michez, A Spiesser, M Petit, S Bertaina… - Journal of Physics …, 2015 - iopscience.iop.org
Magnetic reversal in Mn5Ge3 thin films: an extensive study - IOPscience Skip to content IOP
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Epitaxial growth and magnetic properties of Mn5Ge3/Ge and Mn5Ge3Cx/Ge heterostructures for spintronic applications

V Le Thanh, A Spiesser, MT Dau… - Advances in Natural …, 2013 - iopscience.iop.org
The development of active spintronic devices, such as spin-transistors and spin-diodes, calls
for new materials that are able to efficiently inject the spin-polarized current into group-IV …

Very low-temperature epitaxial growth of Mn5Ge3 and Mn5Ge3C0. 2 films on Ge (111) using molecular beam epitaxy

M Petit, L Michez, CE Dutoit, S Bertaina, VO Dolocan… - Thin Solid Films, 2015 - Elsevier
C-doped Mn 5 Ge 3 compound is ferromagnetic at temperature up to 430 K. Hence it is a
potential spin injector into group-IV semiconductors. Segregation and diffusion of Mn at the …

Magnetic and structural properties of Mn5+ xGe3+ y thin films as a function of substrate orientation

RC de Oliveira, D Demaille, N Casaretto… - Journal of Magnetism …, 2021 - Elsevier
Mn 5 Ge 3 thin films were grown on GaAs (1 1 1) and GaAs (0 0 1) by Molecular Beam
Epitaxy (MBE). The influence of stoichiometry and alloying of the samples was investigated …

Tuning the Mn5Ge3 and Mn11Ge8 thin films phase formation on Ge (111) via growth process

MA Guerboukha, M Petit, A Spiesser, A Portavoce… - Thin Solid Films, 2022 - Elsevier
We have studied the stability of manganese germanide thin films grown on Ge (111)
substrates by three different growth methods: solid phase epitaxy, reactive deposition …