Silicon carbide (SiC) is a fascinating material. In one way, it is very simple; there are only two
atoms building up the crystal—silicon and carbon, where each atom is sp3-hybridized and …

The growth of graphene on SiC/Si substrates is an appealing alternative to the growth on
bulk SiC for cost reduction and to better integrate the material with Si based electronic …

Emerging wide bandgap semiconductor devices such as the ones built with SiC have the
potential to revolutionize the power electronics industry through faster switching speeds …

To lower deposition temperature and reduce thermal mismatch induced stress,
heteroepitaxial growth of single-crystalline 3C–SiC on 150 mm Si wafers was investigated at …

Epitaxial graphene films grown on silicon carbide (SiC) substrate by solid state
graphitization is of great interest for electronic and optoelectronic applications. In this paper …

The potential for enhancement of Si-based devices by growth of SiC films on large-diameter
Si wafers is hampered by the very high temperatures (close to the Si melting temperature) …

SiC is a candidate material for microelectromechanical and nanoelectromechanical
systems, but the high residual stress created during the film grow limits the development of …

In this work an extended study of the carbonization process of the silicon surface and of a
low temperature transition layer in the temperature rump on the 3C-SiC epitaxial growth has …

In this paper we report the morphology and the microstructural properties of thick [1 1 1]-
oriented 3C-SiC films epitaxially grown on T-shaped Si micropillars. This compliant …

Abstract 3C-SiC films grown on (111) Si substrates exhibit poor crystal quality and
experience wafer cracks and bowing preventing access to bulk growth. This work reports …