Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs
AN Tallarico, S Stoffels, P Magnone… - IEEE Electron …, 2016 - ieeexplore.ieee.org
In this letter, we report a detailed experimental investigation of the time-dependent
breakdown induced by forward gate stress in GaN-based power HEMTs with a p-type gate …
breakdown induced by forward gate stress in GaN-based power HEMTs with a p-type gate …
Ultrathin-barrier AlGaN/GaN heterostructure: A recess-free technology for manufacturing high-performance GaN-on-Si power devices
(Al) GaN recess-free normally OFF technology is developed for fabrication of high-yield
lateral GaN-based power devices. The recess-free process is achieved by an ultrathin …
lateral GaN-based power devices. The recess-free process is achieved by an ultrathin …
High-Performance Enhancement-Mode p-Channel GaN MISFETs With Steep Subthreshold Swing
We report an enhancement-mode (E-mode)-channel GaN heterojunction field-effect
transistor with a metal-insulator-semiconductor gate structure. A 60 mV/dec subthreshold …
transistor with a metal-insulator-semiconductor gate structure. A 60 mV/dec subthreshold …
High uniformity normally-OFF GaN MIS-HEMTs fabricated on ultra-thin-barrier AlGaN/GaN heterostructure
Ultra-thin-barrier (UTB) AlGaN/GaN heterostructure is utilized for fabrication of normally-OFF
GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs). The …
GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs). The …
650-V double-channel lateral Schottky barrier diode with dual-recess gated anode
An AlGaN/GaN double-channel Schottky barrier diode (DC-SBD) with dual-recess gated
anode is demonstrated in this letter. The DC-SBD features two recess steps. The deep one …
anode is demonstrated in this letter. The DC-SBD features two recess steps. The deep one …
Improving performance and breakdown voltage in normally-off GaN recessed gate MIS-HEMTs using atomic layer etching and gate field plate for high-power device …
AC Liu, PT Tu, HC Chen, YY Lai, PC Yeh, HC Kuo - Micromachines, 2023 - mdpi.com
A typical method for normally-off operation, the metal–insulator–semiconductor-high
electron mobility transistor (MIS-HEMT) has been investigated. Among various approaches …
electron mobility transistor (MIS-HEMT) has been investigated. Among various approaches …
Improved Performance of Fully-Recessed High-Threshold-Voltage GaN MIS-HEMT With in Situ H₂/N₂ Plasma Pretreatment
B Zhang, J Wang, X Wang, C Wang… - IEEE Electron …, 2022 - ieeexplore.ieee.org
In this letter, we demonstrate a high-threshold-voltage and high-current-density normally-off
SiN/AlN/GaN-on-Si MIS-HEMT with in situ low-damage H 2/N 2 plasma pretreatment. The in …
SiN/AlN/GaN-on-Si MIS-HEMT with in situ low-damage H 2/N 2 plasma pretreatment. The in …
High performance enhancement mode GaN HEMTs using β-Ga2O3 buffer for power switching and high frequency applications: a simulation study
C Sivamani, P Murugapandiyan, A Mohanbabu… - Microelectronics …, 2023 - Elsevier
We report high-performance E-mode HEMT with ultra-wide bandgap β-Ga 2 O 3 buffer using
numerical simulation. The proposed normally-off HEMT showed high breakdown …
numerical simulation. The proposed normally-off HEMT showed high breakdown …
Normally-OFF p-GaN gate double-channel HEMT with suppressed hot-electron-induced dynamic on-resistance degradation
Hot electrons with high kinetic energy could be generated in the channel of GaN high-
electron-mobility transistors (HEMTs) during hard switching operation. Those “lucky” hot …
electron-mobility transistors (HEMTs) during hard switching operation. Those “lucky” hot …
Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By O Based Gate Stack Engineering
In this paper, for the first time, we have experimentally demonstrated enhancement mode (e-
mode) AlGaN/GaN high-electron-mobility transistor (HEMT) operation by integrating p-type …
mode) AlGaN/GaN high-electron-mobility transistor (HEMT) operation by integrating p-type …