Hafnium oxide-based ferroelectric devices for in-memory computing: resistive and capacitive approaches

M Lee, DM Narayan, JH Kim, DN Le… - ACS Applied …, 2024 - ACS Publications
The integration of ferroelectric hafnium oxide (HfO2) into semiconductor device structures
has been a breakthrough in the development of state-of-the-art in-memory computing (IMC) …

FeFET Reliability Modeling for In-Memory Computing: Challenges, Perspective, and Emerging Trends

S Thomann, H Amrouch - IEEE Transactions on Electron …, 2023 - ieeexplore.ieee.org
Ferroelectric FET (FeFET) is a singularly attractive emerging technology with a rich feature
set. Boasting high versatility, it has already been implemented in a host of applications, like …

BEOL FeFET SPICE-Compatible Model for Benchmarking 3-D Monolithic In-Memory TCAM Computation

S Kumar, O Prakash, YS Chauhan… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
Monolithic 3-D (M3D) integration of logic circuits and memory devices has been the most
desired strategy for overcoming the von Neumann bottleneck. Amorphous indium gallium …

Quasi-nondestructive read out of ferroelectric capacitor polarization by exploiting a 2tnc cell to relax the endurance requirement

Y Xiao, S Deng, Z Zhao, Z Faris, Y Xu… - IEEE Electron …, 2023 - ieeexplore.ieee.org
In this work, we exploit a 2TnC ferroelectric random access memory (FeRAM) cell design to
realize the quasi-nondestructive readout (QNRO) of ferroelectric polarization () in a …

Tutorial: The Synergy of Hyperdimensional and In-memory Computing

PR Genssler, S Thomann, H Amrouch - Proceedings of the 2023 …, 2023 - dl.acm.org
Breakthroughs in deep learning consistently drive innovation. However, DNNs tend to
overwhelm conventional computing systems. Hyperdimensional Computing (HDC) is rapidly …

A Compact Ferroelectric 2T-(n+ 1) C Cell to Implement AND-OR Logic in Memory

Y Xiao, Y Xu, S Deng, Z Zhao, S George… - 2023 IEEE Computer …, 2023 - ieeexplore.ieee.org
With the proliferation of data-intensive applications, various logic-in-memory (LIM)/in-
memory computing (IMC) solutions are emerging. These solutions aim to mitigate the von …

Cross-Layer Optimizations for Ferroelectric Neuromorphic Computing

ANMN Islam, K Ni, A Sengupta - 2023 IEEE 66th International …, 2023 - ieeexplore.ieee.org
Hardware paradigms for neuromorphic computing mimic the functionalities of brain
primitives in order to replicate similar area and energy advantages of biological nervous …

Modeling and Benchmarking 5nm Ferroelectric FinFET from Room Temperature down to Cryogenic Temperatures

SS Parihar, S Chatterjee, G Pahwa… - 2023 IEEE 23rd …, 2023 - ieeexplore.ieee.org
The rise in quantum-computing systems, space electronics, and superconducting
processors requires compatible cryogenic memories. The stringent operating conditions for …

Innovations in Hardware Security: Leveraging FeFET Technology for Future Opportunities

A Kar, YS Chauhan, H Amrouch - 2024 IEEE Asia Pacific …, 2024 - ieeexplore.ieee.org
As digital threats grow increasingly sophisticated, advancements in hardware security are
paramount. Ferroelectric Field-Effect Transistor (FeFET) technology stands at the forefront of …

Ferroelectric FET-based In-memory 1 Transistor XOR and Majority gate for Compact and Energy Efficient Hyperdimensional Computing Accelerator

A Chakraborty, S Sahay - Authorea Preprints, 2024 - techrxiv.org
The von Neumann bottleneck has restricted further advancement in processors in terms of
speed. To overcome this several brain-inspired computing paradigms such as in-memory …