Planar Gunn diodes based on doped GaN active layers with different geometries have been
fabricated and characterized. Gunn oscillations have not been observed due to the …

GaN based self-switching diodes (SSDs) have been fabricated for the first time on SiC
substrate. They have been characterized as RF power detectors in a wide frequency range …

In this paper, the occupancy of sidewall surface states having a clear signature in the
performance of AlGaN/GaN-based self-switching diodes (SSDs) is analyzed using a semi …

By means of Monte Carlo simulations of gallium nitride (GaN) planar Gunn diodes, the
epilayer structure on which they are fabricated is optimized in order to achieve ultrahigh …

A nano self-gating diode (SGD) based on nanoscale semiconducting material is proposed,
simulated, and realized on semiconducting carbon nanotubes (CNTs) through a doping-free …

In modern electronics, understanding hot-electron kinetics along with related lattice heating
on nanoscales is prerequisite for realizing functional devices with the highest energy …

The existence of leakage current pathways leading to the appearance of impact ionization
and the potential device breakdown in planar Gunn GaN diodes is analyzed by means of a …

In this paper, we perform, by means of Monte Carlo simulations and experimental
measurements, a geometry optimization of GaN-based nano-diodes for broadband …

Impact ionization originated by the buffer leakage current, together with high electric fields (>
3 MV/cm) at the anode corner of the isolating trenches, has been identified as the failure …

An investigation into self-switching diodes based on highly doped GaN is conducted under
direct current (dc) bias conditions. Different device geometries are explored under various …