Applications and impacts of nanoscale thermal transport in electronics packaging
RJ Warzoha, AA Wilson… - Journal of …, 2021 - asmedigitalcollection.asme.org
This review introduces relevant nanoscale thermal transport processes that impact thermal
abatement in power electronics applications. Specifically, we highlight the importance of …
abatement in power electronics applications. Specifically, we highlight the importance of …
A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices
Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor
devices are under way to realize next-generation power conversion and wireless …
devices are under way to realize next-generation power conversion and wireless …
[图书][B] Wireless communication systems: from RF subsystems to 4G enabling technologies
This practically-oriented, all-inclusive guide covers all the major enabling techniques for
current and next-generation cellular communications and wireless networking systems …
current and next-generation cellular communications and wireless networking systems …
Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors
Self-heating in AlGaN/GaN high electron mobility transistors (HEMTs) negatively impacts
device performance and reliability. Under nominal operating conditions, a hot-spot in the …
device performance and reliability. Under nominal operating conditions, a hot-spot in the …
AlGaN/GaN HFET reliability
High-voltage AlGaN/GaN HFETs can produce high RF output power with nearly ideal power-
added efficiency. But widespread adoption of these HFETs has been limited by a lack of …
added efficiency. But widespread adoption of these HFETs has been limited by a lack of …
Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors
A comparative analysis of the residual stress distributions across the conductive channel of
Ga-face AlGaN/GaN high electron mobility transistors (HEMTs) is presented. Stress was …
Ga-face AlGaN/GaN high electron mobility transistors (HEMTs) is presented. Stress was …
Diamond-incorporated flip-chip integration for thermal management of GaN and ultra-wide bandgap RF power amplifiers
D Shoemaker, M Malakoutian… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
GaN radio frequency (RF) power amplifiers offer many benefits including high power
density, reduced device footprint, high operating voltage, and excellent gain and power …
density, reduced device footprint, high operating voltage, and excellent gain and power …
Diamond-based RF power transistors: Fundamentals and applications
M Kasu, K Ueda, Y Yamauchi, A Tallaire… - Diamond and Related …, 2007 - Elsevier
The present status of diamond-based transistors for high-frequency and high-power
applications is reviewed. We have achieved the drain current density of 550 mA/mm, cut-off …
applications is reviewed. We have achieved the drain current density of 550 mA/mm, cut-off …
GaN HEMT: dominant force in high-frequency solid-state power amplifiers
JJ Komiak - IEEE Microwave Magazine, 2015 - ieeexplore.ieee.org
The gallium nitride (GaN) high-electron-mobility transistor (HEMT) has emerged as the
dominant force in high-frequency solid-state power amplifiers (PAs)-not that it does not have …
dominant force in high-frequency solid-state power amplifiers (PAs)-not that it does not have …
Bendable GaN high electron mobility transistors on plastic substrates
A procedure for fabricating flexible forms of high electron mobility transistors (HEMTs)
supported on plastic substrates is described. The process uses a combination of …
supported on plastic substrates is described. The process uses a combination of …