Precise diagnosis and immunity to viruses, such as severe acute respiratory syndrome
coronavirus 2 (SARS‐CoV‐2) and Middle East respiratory syndrome coronavirus (MERS …

Abstract Indium oxide (In 2 O 3) thin films sputtered at room temperature were annealed
under different atmospheres and examined for thin-film transistor (TFT) active channel …

Abstract Gallium oxide (Ga 2 O 3) is a promising wide bandgap semiconductor that is
viewed as a contender for the next generation of high-power electronics due to its high …

The active layer of metal oxide semiconductor thin film transistor (MOS-TFT) prepared by
solution method, with the advantages of being a low cost and simple preparation process …

Indium-oxide-based thin-film transistors are widely investigated and exhibit higher carrier
mobility than amorphous silicon. Lanthanide-doped Indium oxide TFTs show relatively high …

In this study, a KrF excimer laser with a high-absorption coefficient in metal oxide films and a
wavelength of 248 nm was selected for the post-processing of a film and metal oxide thin …

This work assessed the effects of residual oxygen remaining on the surfaces of a plasma-
assisted reactive sputtering chamber during the deposition of a-InGaZnO x (a-IGZO) thin …

High-performance amorphous oxide semiconductor thin film transistors (AOS-TFT) with
copper (Cu) electrodes are of great significance for next-generation large-size, high-refresh …

In this study, the reliability and electrical properties of indium gallium zinc oxide (IGZO) thin
film transistors (TFTs) are investigated when the working pressure of the sputtering system is …

Nanocomposites gained great attention from both fundamental scientific research and
technological application perspectives emerging as a fascinating class of advanced …