The development of infrared photodetectors is increasingly moving towards the realization of
large-scale, cost-effective integrated systems. Currently, silicon (Si), indium gallium arsenide …

InN direct band gap semiconductor is a promising material in the nitride family for high
power and high frequency optoelectronic devices. However, the reports on photo-sensing …

Nonpolar a-plane GaN epitaxial films were grown on an r-plane sapphire using the plasma-
assisted molecular beam epitaxy system, with various nitrogen plasma power conditions …

The transformation of a two-dimensional elastically strained GaN layer on the AlN surface
into GaN quantum dots (forward 2D-3D transition) after switching off the ammonia flow at …

InN-based III nitride quantum dot (QD) technology has attracted much attention for extended
potential applications in photonic devices covering a broad spectrum compared to …

As intrinsic cuprous phosphide (Cu3P) shows p‐type conductivity, the investigation of n‐type
Cu3P (n‐Cu3P) was lacking and hindered its development and application. In this paper …

In the last few decades, there has been a phenomenal rise and evolution in the field of III–
Nitride semiconductors for optoelectronic applications such as lasers, sensors and …

Self-aligned GaN nanorods of various densities are grown on an r-plane Al 2 O 3 substrate
with Stranski–Krastanov or layer-plus-island growth conditions by using a plasma-assisted …

Проведен расчет энергии деформации и пьезоэлектрического потенциала на
поверхности полупроводника AlN (0001) с заглубленными гексагональными …

We report on the growth and characterization of undoped indium nitride (InN) thin films
grown on a silicon substrate. The InN thin films were grown on aluminium nitride (AlN) …