Ferroelectric domain walls have emerged as a new type of interface in which the dynamic
characteristics of ferroelectricity introduce the element of spatial mobility, allowing real-time …

The manipulation of magnetic properties by an electric field in magnetoelectric multiferroic
materials has driven significant research activity, with the goal of realizing their …

Ferroelectric and ferroelastic domain walls are 2D topological defects with thicknesses
approaching the unit cell level. When this spatial confinement is combined with observations …

Materials with a coexistence of magnetic and ferroelectric order—multiferroics—provide an
efficient route for the control of magnetism by electric fields. The study of multiferroics dates …

Ferroelectric domain walls are atomically sharp topological defects that separate regions of
uniform polarization. The discovery of electrical conductivity in specific types of walls gave …

Multiferroics are those materials with more than one ferroic order, and magnetoelectricity
refers to the mutual coupling between magnetism (spins and/or magnetic field) and …

Active sites play a pivotal role in photo/electrocatalysis, particularly in the transition from
fossil fuels to clean, efficient and renewable energy sources. Precise identification of catalyst …

Topological spin/polarization structures in ferroic materials continue to draw great attention
as a result of their fascinating physical behaviors and promising applications in the field of …

Ferroelectric domain walls naturally form at nanoscale interfaces of polar order leading to
electronic properties distinct from the bulk that can also be electrically programmed. These …

A domain wall‐enabled memristor is created, in thin film lithium niobate capacitors, which
shows up to twelve orders of magnitude variation in resistance. Such dramatic changes are …