The reduction in electronic recombination losses by the passivation of silicon surfaces is a
critical enabler for high-efficiency solar cells. In 2006, aluminum oxide (Al 2 O 3) nanolayers …

Photovoltaic (PV) installations have experienced significant growth in the past 20 years.
During this period, the solar industry has witnessed technological advances, cost reductions …

The impact of the transition metals iron, chromium, nickel, titanium and copper on solar‐cell
performance is investigated. Each impurity is intentionally added to the silicon feedstock …

For the first time, the sensitivity to impurities of the solar cell conversion efficiency is reported
for a state‐of‐the‐art (ie, 18%) and advanced device architecture (ie, 23%). The data are …

This paper presents a direct quantitative comparison of the effectiveness of boron diffusion,
phosphorus diffusion, and aluminum alloying in removing interstitial iron in crystalline silicon …

Surface recombination loss limits the efficiency of crystalline silicon (c-Si) solar cell and
effective passivation is inevitable in order to reduce the recombination loss. In this article, we …

A phosphorus diffusion gettering model is used to examine the efficacy of a standard
gettering process on interstitial and precipitated iron in multicrystalline silicon. The model …

The efficacy of higher-temperature gettering processes in reducing precipitated iron
concentrations is assessed by synchrotron-based micro-X-ray fluorescence. By measuring …

The electrical properties of N-type Recharged-Czochralski (RCz) silicon solar cells are
significantly affected by the concentration of metal impurities in the silicon materials. In this …

Electronic grade Czochralski and float zone silicon in the as grown state have a very low
concentration of recombination generation centers (typically< 1010 cm− 3). Consequently, in …