Vertical interconnects of microbumps in 3D integration

C Chen, D Yu, KN Chen - MRS bulletin, 2015 - cambridge.org
With the electronics packaging industry shifting increasingly to three-dimensional
packaging, microbumps have been adopted as the vertical interconnects between chips …

Wafer-level vacuum packaging of smart sensors

A Hilton, DS Temple - Sensors, 2016 - mdpi.com
The reach and impact of the Internet of Things will depend on the availability of low-cost,
smart sensors—“low cost” for ubiquitous presence, and “smart” for connectivity and …

Low-temperature direct copper-to-copper bonding enabled by creep on (111) surfaces of nanotwinned Cu

CM Liu, HW Lin, YS Huang, YC Chu, C Chen… - Scientific reports, 2015 - nature.com
Abstract Direct Cu-to-Cu bonding was achieved at temperatures of 150–250° C using a
compressive stress of 100 psi (0.69 MPa) held for 10–60 min at 10− 3 torr. The key …

Substrate bonding with diffusion barrier structures

DC Edelstein, DC La Tulipe Jr, W Lin… - US Patent …, 2017 - Google Patents
(57) ABSTRACT A metallic dopant element having a greater oxygen-affinity than copper is
introduced into, and/or over, Surface portions of copper-based metal pads and/or Surfaces …

Low-temperature direct copper-to-copper bonding enabled by creep on highly (1 1 1)-oriented Cu surfaces

CM Liu, H Lin, YC Chu, C Chen, DR Lyu, KN Chen… - Scripta Materialia, 2014 - Elsevier
We achieve low-temperature Cu-to-Cu direct bonding using highly (1 1 1)-orientated Cu
films. The bonding temperature can be lowered to 200° C at a stress of 114 psi for 30 min at …

Effect of anisotropic grain growth on improving the bonding strength of< 111>-oriented nanotwinned copper films

SY Chang, YC Chu, KN Tu, C Chen - Materials Science and Engineering: A, 2021 - Elsevier
To overcome the scale-down dilemma of solder-based microbumps, copper-to-copper direct
bonding has emerged to be one of the most promising approaches to replace solder joints in …

Thermal instability of nanocrystalline Cu enables Cu-Cu direct bonding in interconnects at low temperature

Y Wang, YT Huang, YX Liu, SP Feng, MX Huang - Scripta Materialia, 2022 - Elsevier
Cu-Cu direct bonding has provided an alternative packaging method to circumvent various
issues that arise in conventional Cu/Sn/Cu interconnects, and has potential applications in …

Copper bonding technology in heterogeneous integration

YG Lee, M McInerney, YC Joo, IS Choi… - Electronic Materials …, 2024 - Springer
As semiconductor device scaling faces a severe technical bottleneck, vertical die stacking
technologies have been developed to obtain high performance, high density, low latency …

Macro-3D: A physical design methodology for face-to-face-stacked heterogeneous 3D ICs

L Bamberg, A García-Ortiz, L Zhu… - … , Automation & Test …, 2020 - ieeexplore.ieee.org
Memory-on-logic and sensor-on-logic face-to-face stacking are emerging design
approaches that promise a significant increase in the performance of modern systems-on …

Substrate bonding with diffusion barrier structures

DC Edelstein, DC La Tulipe Jr, W Lin… - US Patent …, 2015 - Google Patents
2013-05-30 Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION
reassignment INTERNATIONAL BUSINESS MACHINES CORPORATION ASSIGNMENT OF …