[HTML][HTML] Effects of varying the fin width, fin height, gate dielectric material, and gate length on the DC and RF performance of a 14-nm SOI FinFET structure
The FinFET architecture has attracted growing attention over the last two decades since its
invention, owing to the good control of the gate electrode over the conductive channel …
invention, owing to the good control of the gate electrode over the conductive channel …
FinFET to GAA MBCFET: A Review and Insights
This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-
all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling …
all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling …
Novel process integration flow of germanium-on-silicon FinFETs for low-power technologies
S Choudhary, M Yogesh, D Schwarz… - Journal of Vacuum …, 2023 - pubs.aip.org
Germanium channel FinFET transistors process integration on a silicon substrate is a
promising candidate to extend the complementary metal–oxide–semiconductor …
promising candidate to extend the complementary metal–oxide–semiconductor …
Investigation on TG n-FinFET parameters by varying channel doping concentration and gate length
In this paper, a 3D process of a nanometric n-channel fin field-effect transistor (FinFET) is
discussed and the impact of variations of the fin parameter, the gate work function, and …
discussed and the impact of variations of the fin parameter, the gate work function, and …
Mathematical Modeling and Performance Evaluation of 3D Ferroelectric Negative Capacitance FinFET
Ferroelectric negative capacitance materials have now been proposed for lowering
electronics energy dissipation beyond basic limitations. In this paper, we presented the …
electronics energy dissipation beyond basic limitations. In this paper, we presented the …
Comparative performance of the ultra-short channel technology for the DG-FinFET characteristics using different high-k dielectric materials
N Bourahla, A Bourahla, B Hadri - Indian Journal of Physics, 2021 - Springer
The downscaling of the SOI-MOSFET device has an important role of the advanced
technology in the semiconductor industry, so the researchers aim to find the structure which …
technology in the semiconductor industry, so the researchers aim to find the structure which …
Reliable and ultra-low power approach for designing of logic circuits
The principal design concern in today's very large-scale integration (VLSI) industry is power
dissipation. Power dissipation in a chip rises reliability issues. Static power dissipation …
dissipation. Power dissipation in a chip rises reliability issues. Static power dissipation …
3D investigation of 8-nm tapered n-FinFET model
The miniaturization has become a key word for advanced integrated circuits over the last few
years. It is within this context that the fin field effect transistor (FinFET) has appeared as a …
years. It is within this context that the fin field effect transistor (FinFET) has appeared as a …
Impact of fin width on nano scale tri-gate FinFET including the quantum mechanical effect
Impact of fin width on nano scale tri-gate FinFET including the quantum mechanical effect -
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Impact of temperature on radio frequency/linearity and harmonic distortion characteristics of Ge multi‐channel fin shaped field‐effect transistor
RR Das, S Maity, A Chowdhury… - International Journal of …, 2022 - Wiley Online Library
This dissertation demonstrates the reliability issues associated with the temperature of Ge
multi‐channel fin shaped field‐effect transistor (Mch‐FinFET). Temperature dependence on …
multi‐channel fin shaped field‐effect transistor (Mch‐FinFET). Temperature dependence on …