Advancements in the semiconductor industry introduce novel channel materials, device
structures, and integration methods, leading to intricate physics challenges when …

In this paper, we present a threshold-voltage extraction method for zinc oxide (ZnO) thin-film
transistors (TFTs). Bottom-gate atomic-layer-deposited ZnO TFTs exhibit typical n-type …

In this study, we investigated the electrical characteristics of amorphous indium–tin–gallium–
zinc-oxide thin-film transistors (TFTs)(a-ITGZO TFTs) with HfO 2 and HfAlO gate dielectrics …

In amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), the conduction mechanism of
percolation and trap-limited conduction prevails within the limits of gate voltage. In these …

In this work, we systematically investigated the carrier transport of hysteresis-free
amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) incorporating high-k (HfO 2) x (Al 2 …

This paper presents a Computer‐aided design (CAD) model for a‐IGZO thin film transistors
(TFTs) by adapting SPICE level‐61 RPI a‐Si: H (Hydrogenated Amorphous Silicon) TFT …

In this paper, the current conduction mechanisms of an a-IGZO thin-film transistor based on
HfO 2/SiN x stacks were investigated at room temperature and its variation at 523 K. Ti/HfO …

Device characteristics of amorphous InGaZnO thin film transistors (a-IGZO TFTs) at a
cryogenic temperature () are analyzed including device instability after applying current …

A universal core surface potential modeling methodology is proposed to obtain the
continuous explicit solutions to Poisson equation for future heterogeneous AOS/Si co …

Indium-Gallium-Zinc-Oxide (IGZO) thin-film transistor (TFT) is an emerging electronic device
with many applications, such as active-matrix high-resolution display, wearable electronics …