Formation, migration, and clustering of point defects in CuInSe2 from first principles
LE Oikkonen, MG Ganchenkova… - Journal of Physics …, 2014 - iopscience.iop.org
The electronic properties of high-efficiency CuInSe 2 (CIS)-based solar cells are affected by
the microstructural features of the absorber layer, such as point defect types and their …
the microstructural features of the absorber layer, such as point defect types and their …
Deposition of binary, ternary and quaternary metal selenide thin films from diisopropyldiselenophosphinato-metal precursors
The tetragonal chalcopyrite phases CuInSe 2, CuGaSe 2 and CuIn 0.7 Ga 0.3 Se 2 have
been deposited onto the glass substates by Aerosol Assisted Chemical Vapour Deposition …
been deposited onto the glass substates by Aerosol Assisted Chemical Vapour Deposition …
Dimethyl selenide complexes of copper, gallium and indium halides as potential precursors for selenium-containing chalcopyrite semiconducting materials
The coordination chemistry of copper, gallium and indium halides with the simplest possible
selenoether ie Me2Se was investigated with the aim to use the resulting complexes as …
selenoether ie Me2Se was investigated with the aim to use the resulting complexes as …
Some physical properties of CuInSe2 thin films
A Ashour - Journal of Materials Science: Materials in Electronics, 2006 - Springer
Semiconducting thin films of CuInSe 2 have been grown by thermal annealing in air of
evaporated layers of Cu, In and Se on glass substrates. The structure of the films has been …
evaporated layers of Cu, In and Se on glass substrates. The structure of the films has been …
Study of polycrystalline CuInSe2 thin film formation
CuInSe2 polycrystalline films were grown on glass substrates by preparing stacked
elemental layers (SELs) of Cu, In and Se followed by annealing at 200, 250, 300 and 400° C …
elemental layers (SELs) of Cu, In and Se followed by annealing at 200, 250, 300 and 400° C …
Low cost CuInSe2 thin films production by stacked elemental layers process for large area fabrication of solar cell application
MC Sharma, B Tripathi, S Kumar, S Srivastava… - Materials Chemistry and …, 2012 - Elsevier
Low cost deposition of large area CuInSe2 (CIS) thin films have been grown on Mo-coated
glass substrate by simple and economic stacked elemental layer deposition technique in …
glass substrate by simple and economic stacked elemental layer deposition technique in …
Superionic Transition and Self-Propagating High-Temperature Synthesis of Copper Selenide in Thin Films.
VG Myagkov, LE Bykova, GN Bondarenko - Doklady Physics, 2003 - search.ebscohost.com
Studies superionic transition and self-propagating high-temperature synthesis (SHS) of
copper selenide in thin films. Diffraction patterns of the copper selenide bilayer film system; …
copper selenide in thin films. Diffraction patterns of the copper selenide bilayer film system; …
Суперионный переход и самораспространяющийся высокотемпературный синтез селенида меди в тонких пленках
ВГ Мягков, ЛЕ Быкова, ГН Бондаренко - Доклады академии наук, 2003 - elibrary.ru
МЯГКОВ и др. ратуре подложки TS O 380 К и проходила в режиме СВС. Картина
распространения фронта была тиа пичной для СВС в тонких пленках. На рис. 2 приа …
распространения фронта была тиа пичной для СВС в тонких пленках. На рис. 2 приа …
[HTML][HTML] Characterization of vacancy defects in Cu (In, Ga) Se2 by positron annihilation spectroscopy
The photovoltaic performance of Cu (In 1-x, Ga x) Se 2 (CIGS) materials is commonly
assumed to be degraded by the presence of vacancy-related defects. However …
assumed to be degraded by the presence of vacancy-related defects. However …
Optical manipulation of temperature formation of CuInSe2 thin films
Polycrystalline thin films of CuInSe2 were grown onto glass substrates using the stacked
elemental layer (SEL) technique involving the annealing at different temperatures in air …
elemental layer (SEL) technique involving the annealing at different temperatures in air …