Recent advances in GaN‐based power HEMT devices
The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …
systems require the development of power devices that can outperform conventional Si …
Status of aluminum oxide gate dielectric technology for insulated-gate GaN-based devices
A Calzolaro, T Mikolajick, A Wachowiak - Materials, 2022 - mdpi.com
Insulated-gate GaN-based transistors can fulfill the emerging demands for the future
generation of highly efficient electronics for high-frequency, high-power and high …
generation of highly efficient electronics for high-frequency, high-power and high …
Insight into the suppression mechanism of bulk traps in Al2O3 gate dielectric and its effect on threshold voltage instability in Al2O3/AlGaN/GaN metal-oxide …
Bulk trapping and its effects on threshold voltage hysteresis (ΔV TH) in Al 2 O 3/AlGaN/GaN
metal–oxide-semiconductor high electron mobility transistors (MOS-HEMTs) have been …
metal–oxide-semiconductor high electron mobility transistors (MOS-HEMTs) have been …
Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si3N4 as Gate Dielectric and Passivation Layer
Z Zhang, G Yu, X Zhang, X Deng, S Li… - … on Electron Devices, 2016 - ieeexplore.ieee.org
This paper investigates the performance of AlGaN/gallium nitride (GaN) MIS high electron
mobility transistors (MIS-HEMTs). The gate dielectric layer and the surface passivation layer …
mobility transistors (MIS-HEMTs). The gate dielectric layer and the surface passivation layer …
Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess
Low-current-collapse normally OFF GaN-on-Si MIS high-electron-mobility transistors (MIS-
HEMTs) are fabricated with low-pressure chemical-vapor-deposited SiN x (LPCVD-SiN x) …
HEMTs) are fabricated with low-pressure chemical-vapor-deposited SiN x (LPCVD-SiN x) …
Normally-off p-GaN/AlGaN/GaN high electron mobility transistors using hydrogen plasma treatment
In this letter, we report a method by introducing hydrogen plasma treatment to realize
normally-off p-GaN/AlGaN/GaN HEMT devices. Instead of using etching technology …
normally-off p-GaN/AlGaN/GaN HEMT devices. Instead of using etching technology …
Effective Suppression of Amorphous Ga2O and Related Deep Levels on the GaN Surface by High-Temperature Remote Plasma Pretreatments in GaN-Based Metal …
Gallium nitride (GaN) has been considered one of the most promising materials for the next-
generation power and radio-frequency electronic devices, as they can operate at higher …
generation power and radio-frequency electronic devices, as they can operate at higher …
Characterization of Leakage and Reliability of SiNx Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs
In this paper, we systematically investigated the leakage and breakdown mechanisms of the
low-pressure chemical vapor deposition (LPCVD) silicon nitride thin film deposited on …
low-pressure chemical vapor deposition (LPCVD) silicon nitride thin film deposited on …
Suppression of interface states between nitride-based gate dielectrics and ultrathin-barrier AlGaN/GaN heterostructure with in situ remote plasma pretreatments
A silicon nitride (SiN x) film deposited at 500 C by plasma-enhanced atomic layer deposition
(PEALD) is employed as the gate dielectric for GaN-based metal-insulator-semiconductor …
(PEALD) is employed as the gate dielectric for GaN-based metal-insulator-semiconductor …
p-GaN gate enhancement-mode HEMT through a high tolerance self-terminated etching process
Y Zhou, Y Zhong, H Gao, S Dai, J He… - IEEE Journal of the …, 2017 - ieeexplore.ieee.org
An enhancement-mode high-electron-mobility transistor with a p-GaN gate was fabricated
by using a chemistry-ease Cl 2/N 2/O 2-based inductively coupled plasma etching …
by using a chemistry-ease Cl 2/N 2/O 2-based inductively coupled plasma etching …