[HTML][HTML] Electron effective mass in GaN revisited: New insights from terahertz and mid-infrared optical Hall effect
N Armakavicius, S Knight, P Kühne, V Stanishev… - APL Materials, 2024 - pubs.aip.org
Electron effective mass is a fundamental material parameter defining the free charge carrier
transport properties, but it is very challenging to be experimentally determined at high …
transport properties, but it is very challenging to be experimentally determined at high …
[HTML][HTML] Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties
A Papamichail, AR Persson, S Richter… - Applied Physics …, 2024 - pubs.aip.org
Ultra-thin high-Al content barrier layers can enable improved gate control and high-
frequency operation of AlGaN/GaN high electron mobility transistors (HEMTs) but the …
frequency operation of AlGaN/GaN high electron mobility transistors (HEMTs) but the …
[HTML][HTML] Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect
N Armakavicius, P Kühne, A Papamichail, H Zhang… - Materials, 2024 - mdpi.com
Group-III nitrides have transformed solid-state lighting and are strategically positioned to
revolutionize high-power and high-frequency electronics. To drive this development forward …
revolutionize high-power and high-frequency electronics. To drive this development forward …
Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall
N Armakavicius, P Kühne, A Papamichail, H Zhang… - 2024 - digitalcommons.unl.edu
Group-III nitrides have transformed solid-state lighting and are strategically positioned to
revolutionize high-power and high-frequency electronics. To drive this development forward …
revolutionize high-power and high-frequency electronics. To drive this development forward …