To overcome the environment susceptibility of flexible amorphous InSnZnO (a-ITZO) thin-film
transistors (TFTs), a surface passivation method utilizing-octyltriethoxysilane (OTES) self …

Amorphous indium gallium zinc oxide is a popular semiconductor candidate for amorphous
oxide semiconductor thin-film transistors in the field of flat-panel display. However, the …

Flexible wearable electronics have been developing rapidly in recent years, and one of its
core devices, thin‐film transistor (TFT), is also attracting attention. Current TFT preparation …

Flexible thin-film transistors with high current-driven capability are of great significance for
the next-generation new display technology. The effect of a Cu-Cr-Zr (CCZ) copper alloy …

In this work, we systematically investigated the carrier transport of hysteresis-free
amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) incorporating high-k (HfO 2) x (Al 2 …

In this paper, we examine the possibility of using homogeneous and monolayer Cu-0.08
wt.% Cr-0.05 wt.% Zr (CuCrZr) ternary alloy film as both bottom-gate and source/drain (S/D) …

The research on the intrinsic relationship between target quality and TFT (thin film transistor)
performance is not perfect for magnetron sputtering processes. The systematic analysis of …

The neodymium (Nd) doped indium-zinc-oxide (NIZO) is a material with high mobility and
great potential in transparent electronic devices. NIZO thin films were prepared by pulsed …

Doping of sesquioxide alloy onto TiO 2 nanomaterials was carried out in a novel green
chemistry method using Corallo carpus epigaeus to fabricate the electrodes for …

With the development of flexible optoelectronic devices, the research on electrode materials
with high conductivity and excellent contact characteristics has received extensive attention …