[HTML][HTML] Production of large-area 2D materials for high-performance photodetectors by pulsed-laser deposition
JD Yao, ZQ Zheng, GW Yang - Progress in Materials Science, 2019 - Elsevier
Our review provides a comprehensive overview on the latest progress in pulsed-laser
deposition (PLD) of 2D layered materials (2DLMs), and its application in photoelectric …
deposition (PLD) of 2D layered materials (2DLMs), and its application in photoelectric …
Alternative Lone‐Pair ns2‐Cation‐Based Semiconductors beyond Lead Halide Perovskites for Optoelectronic Applications
Lead halide perovskites have emerged in the last decade as advantageous high‐
performance optoelectronic semiconductors, and have undergone rapid development for …
performance optoelectronic semiconductors, and have undergone rapid development for …
Atomic layer deposition of cubic and orthorhombic phase tin monosulfide
OV Bilousov, Y Ren, T Törndahl… - Chemistry of …, 2017 - ACS Publications
Tin monosulfide (SnS) is a promising light-absorbing material with weak environmental
constraints for application in thin film solar cells. In this paper, we present low-temperature …
constraints for application in thin film solar cells. In this paper, we present low-temperature …
n-type conversion of SnS by isovalent ion substitution: Geometrical doping as a new doping route
Tin monosulfide (SnS) is a naturally p-type semiconductor with a layered crystal structure,
but no reliable n-type SnS has been obtained by conventional aliovalent ion substitution. In …
but no reliable n-type SnS has been obtained by conventional aliovalent ion substitution. In …
Screening limited switching performance of multilayer 2D semiconductor FETs: the case for SnS
Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices
with SnS thickness between 50 and 100 nm were fabricated and studied to understand their …
with SnS thickness between 50 and 100 nm were fabricated and studied to understand their …
Ultrasonic synthesis of In-doped SnS nanoparticles and their physical properties
Abstract Indium (In)-doped Tin (II) Sulfide (SnS) nanoparticles (NPs) were synthesized by an
ultra-sonication method and their optical, electrical, dielectric and photocatalytic properties …
ultra-sonication method and their optical, electrical, dielectric and photocatalytic properties …
A hybrid pulsed laser deposition approach to grow thin films of chalcogenides
Vapor‐pressure mismatched materials such as transition metal chalcogenides have
emerged as electronic, photonic, and quantum materials with scientific and technological …
emerged as electronic, photonic, and quantum materials with scientific and technological …
Route to n-type doping in SnS
SnS is intrinsically a p-type semiconductor, and much effort has been made to attain n-type
conduction. In this letter, we performed density functional theory calculations to seek an …
conduction. In this letter, we performed density functional theory calculations to seek an …
Heteroepitaxial growth of SnSe films by pulsed laser deposition using Se-rich targets
T Inoue, H Hiramatsu, H Hosono… - Journal of Applied Physics, 2015 - pubs.aip.org
Epitaxial growth of SnSe was studied using pulsed laser deposition on three kinds of single-
crystalline substrates, MgO (100), NaCl (100), and SrF 2 (100), along with silica glass. For …
crystalline substrates, MgO (100), NaCl (100), and SrF 2 (100), along with silica glass. For …
Noticeable photo-sensing properties of SnS: Cu thin films fabricated by thermal evaporation technique
Due to their optoelectronic behavior, superior optical absorption, and tunable band-gap
energies, metal chalcogenides have attracted global attention in recent decades. SnS (tin …
energies, metal chalcogenides have attracted global attention in recent decades. SnS (tin …