After the first visible photoluminescence (PL) from porous silicon (pSi), continuous efforts are
made to fabricate Si‐based compound nanomaterials embedded in matrices such as oxide …

High mobility and stability are critical factors for thin film transistor (TFT) device quality.
These parameters are directly dependent on the crystalline structure of the active layer …

In this work we investigate the chemical species involved in the light induced degradation of
plasma enhanced chemical vapor deposited (PECVD) hydrogenated silicon nitride (SiN x …

This paper tackles challenges in silicon (Si) solar cells, specifically the use of hazardous
Phosphorus Oxychloride (POCl 3) for emitter formation and silane/ammonia for the Anti …

Silicon nitride thin films are very important for their possible use in semiconductor industry
and electronic applications. Changing the deposition parameters, silicon nitrides which have …

To get high performance light emitting devices on Si platform with emission wavelength at
1.55 μm is a challenge for future Si-based opto-electronic integration chips. In this paper, we …

Abstract Effect of ammonia plasma on the luminescence and stability of the porous silicon
(PS) has been studied. Samples were cut into different parts to compare the as-deposited …

Hydrogenated polymorphous silicon (pm-Si: H) is a suitable candidate for application in
silicon-based thin film solar cells because it exhibits improved electronic transport properties …

In this work, we propose a double stack layer design of SiN x/pm-Si thin films by using
dichlorosilane in plasma enhanced chemical vapor deposition (PECVD). Adequate …

To improve the solar-blind/visible-blind photocurrent response rejection ratio of solar-blind
photodetectors, we designed and fabricated a high-performance SiO 2/SiN x 1-D photonic …