Site‐Specific Emulation of Neuronal Synaptic Behavior in Au Nanoparticle‐Decorated Self‐Organized TiOx Surface
Neuromorphic computing is a potential approach for imitating massive parallel processing
capabilities of a bio‐synapse. To date, memristors have emerged as the most appropriate …
capabilities of a bio‐synapse. To date, memristors have emerged as the most appropriate …
[HTML][HTML] Transition Metal Oxide Based Resistive Random-Access Memory: An Overview of Materials and Device Performance Enhancement Techniques
D Yadav, AK Dwivedi, S Verma, DK Avasthi - Journal of Science: Advanced …, 2024 - Elsevier
The emergence of the big data era has led to enormous demand for memory devices that
are low cost, flexible, fabrication friendly, transparent, energy efficient, and have a higher …
are low cost, flexible, fabrication friendly, transparent, energy efficient, and have a higher …
Impact of Self-Trapped Excitons on Blue Photoluminescence in TiO2 Nanorods on Chemically Etched Si Pyramids
Temperature-dependent photoluminescence (PL) of titanium oxide (TiO2) shows an
evolution of blue emission when exposed to 50 keV Ar+ ions. The origin of observed PL has …
evolution of blue emission when exposed to 50 keV Ar+ ions. The origin of observed PL has …
Multilevel programming in Cu/NiOy/NiOx/Pt unipolar resistive switching devices
The application of a NiO y/NiO x bilayer in resistive switching (RS) devices with x> y was
studied for its ability to achieve reliable multilevel cell (MLC) characteristics. A sharp change …
studied for its ability to achieve reliable multilevel cell (MLC) characteristics. A sharp change …
Investigating the origins of high multilevel resistive switching in forming free Ti/TiO2− x-based memory devices through experiments and simulations
Although multilevel capability is probably the most important property of resistive random
access memory (RRAM) technology, it is vulnerable to reliability issues due to the stochastic …
access memory (RRAM) technology, it is vulnerable to reliability issues due to the stochastic …
Linearly potentiated synaptic weight modulation at nanoscale in a highly stable two-terminal memristor
The fabrication of nanoscale electronic synapses is an essential step towards the
development of neuromorphic devices having a high integration density. Excellent learning …
development of neuromorphic devices having a high integration density. Excellent learning …
Role of Oxygen Vacancy on the Hydrophobic Behavior of TiO2 Nanorods on Chemically Etched Si Pyramids
Oxygen vacancy (OV) controlled hydrophobicity of self-assembled TiO2 nanorods (NRs) on
chemically etched Si pyramids is investigated by irradiating with 50 keV Ar+-ions at room …
chemically etched Si pyramids is investigated by irradiating with 50 keV Ar+-ions at room …
Ar+ ions irradiation induced memristive behavior and neuromorphic computing in monolithic LiNbO3 thin films
Recently, memristors have attracted considerable attention because of their potential
applications in artificial neural networks which will promote the future development of …
applications in artificial neural networks which will promote the future development of …
500 keV Ar2+ ion irradiation induced anatase to brookite phase transformation and ferromagnetism at room temperature in TiO2 thin films
In our earlier report, where we have demonstrated ferromagnetic behavior at room
temperature (RT) in TiO 2 thin films deposited through electron beam evaporation technique …
temperature (RT) in TiO 2 thin films deposited through electron beam evaporation technique …
Effect of 500 keV Ar2+ ion irradiation on structural and magnetic properties of TiO2 thin films annealed at 900° C
Present study investigates the structural and magnetic properties of TiO 2 thin films prepared
by electron beam evaporation technique, annealed at 900° C and irradiated with 500 keV Ar …
by electron beam evaporation technique, annealed at 900° C and irradiated with 500 keV Ar …