Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors

J Yang, K Liu, X Chen, D Shen - Progress in Quantum Electronics, 2022 - Elsevier
Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …

Research advances in ZnO nanomaterials-based UV photode tectors: a review

J Hu, J Chen, T Ma, Z Li, J Hu, T Ma, Z Li - Nanotechnology, 2023 - iopscience.iop.org
Ultraviolet photodetectors (UV PDs) have always been the research focus of semiconductor
optoelectronic devices due to their wide application fields and diverse compositions. As one …

High temperature resistant solar‐blind ultraviolet photosensor for neuromorphic computing and cryptography

Y Chen, Y Li, S Niu, X Yang, W Dou… - Advanced Functional …, 2024 - Wiley Online Library
High‐temperature resistant solar‐blind optoelectronic synapse has a significant demand
such as aerospace and fire warning, which integrates sensing and processing functions to …

Synergetic Effect of Photoconductive Gain and Persistent Photocurrent in a High-Photoresponse Ga2O3 Deep-Ultraviolet Photodetector

Z Liu, L Du, SH Zhang, L Li, ZY Xi… - … on Electron Devices, 2022 - ieeexplore.ieee.org
In this work, a metal–semiconductor–metal (MSM)-gallium oxide (Ga2O3) photodetector
(PD) was constructed by microprocessing techniques, including UV photolithography, liftoff …

Earth-abundant and environmentally benign Ni–Zn iron oxide intercalated in a polyaniline based nanohybrid as an ultrafast photodetector

A Singh, A Verma, BC Yadav, P Chauhan - Dalton Transactions, 2022 - pubs.rsc.org
Nickel–zinc iron oxide (NZF) was introduced into a polyaniline (PANI) matrix by an in situ
chemical oxidation polymerization approach. The surface composition and chemical states …

Structural and optoelectronic characteristics of β-Ga 2 O 3 epitaxial films with Zn alloying and subsequent oxygen annealing

X Sun, K Liu, X Chen, Q Hou, Z Cheng… - Journal of Materials …, 2023 - pubs.rsc.org
Pure and∼ 7.5 at% Zn alloyed β-Ga2O3 epitaxial films were epitaxially grown by metal
organic chemical vapor deposition choosing sapphire (c-plane) as substrates, followed by …

Photoelectric Studies as the Key to Understanding the Nonradiative Processes in Chromium Activated NIR Materials

N Majewska, MH Fang, S Mahlik - Journal of the American …, 2024 - ACS Publications
In this study, we synthesized a series of Ga1. 98–x In x O3: 0.02 Cr3+ materials with varying
x values from 0.0 to 1.0, focusing on their broadband near-infrared emission and …

Enhancement of crystalline quality and solar-blind photodetection characteristics of ε-Ga 2 O 3 films by introducing Zn impurity

X Sun, K Liu, X Chen, Y Zhu, Z Cheng… - Journal of Materials …, 2024 - pubs.rsc.org
ε-Ga2O3 films with and without Zn impurity were epitaxially grown by metal organic chemical
vapor deposition on a c-plane sapphire substrate, and were then face-to-face annealed in …

Mechanism for long photocurrent time constants in α-Ga2O3 UV photodetectors

AY Polyakov, AV Almaev, VI Nikolaev… - ECS Journal of Solid …, 2023 - iopscience.iop.org
Deep centers and their influence on photocurrent spectra and transients were studied for
interdigitated photoresistors on α-Ga 2 O 3 undoped semi-insulating films grown by Halide …

Origin of the giant persistent photoconductivity in LaAlO3/SrTiO3 heterostructures probed by noise spectroscopy

K Eom, JW Lee, G Yang, Y Kim, J Jeon, J Yeon… - Journal of Materials …, 2023 - Elsevier
Abstract LaAlO 3/SrTiO 3 (LAO/STO) heterostructures have shown a strong persistent
photoconductivity (PPC) at room temperature. The abnormally strong PPC has attracted …