Resistive nonvolatile memory (NVM) is considered to be a leading candidate for next-
generation memory. However, maintaining a target sensing margin is a challenge with …

This paper proposes a Differential-Input Body Bias Sense Amplifier (DIBBSA) with an auto-
offset mitigation feature suitable for low-voltage SRAMs where the differential bitline signals …

With continued CMOS technology scaling down, transistors exhibit higher degrees of
variation and mismatch, resulting in a larger offset voltage. A large offset voltage will enlarge …

An offset tolerant SRAM sense amplifier (SA) deployed with sample-boost-latch technique to
facilitate both common mode and differential mode boosting is proposed. The common …

A double-tail sense amplifier (DTSA) is designed as a drop-in replacement for a
conventional SRAM sense amplifier (SA), to enable a robust read operation at low voltages …

Physical limitations in scaling of Non-Volatile Memories (NVMs) necessitates alternative
ways to increase on-chip storage density and reduce cost. New technologies like MRAMs …

Resistance-based memory devices are considered as a strong candidate for next-
generation nonvolatile memories as well as potential application in high density embedded …

A capacitor-coupled stacked-based sense amplifier (CC-STSA) is proposed to compensate
the input-referred offset voltage (VOS), which dictates the minimum required bitline swing for …

Examining sense amplifiers is vital to enhance circuit efficiency, optimize reads, minimize
power usage, and elevate system functionality through precise signal detection and faster …

This study presents a comparative study of single, regular and flip well subthreshold SRAMs
in 22 nm FDSOI technology. A 7T loadless SRAM cell with a decoupled read and write port …