Ultra low noise cryogenic amplifiers for radio astronomy

EW Bryerton, M Morgan… - 2013 IEEE Radio and …, 2013 - ieeexplore.ieee.org
Cryogenic cooling of receivers to reduce their noise temperature is especially important in
radio astronomy, as the antenna noise temperature is determined by the cosmic microwave …

An MMIC low-noise amplifier design technique

M Varonen, R Reeves, P Kangaslahti… - IEEE Transactions …, 2016 - ieeexplore.ieee.org
In this paper we discuss the design of low-noise amplifiers (LNAs) for both cryogenic and
room-temperature operation in general and take the stability and linearity of the amplifiers …

A 67–116-GHz cryogenic low-noise amplifier in a 50-nm InGaAs metamorphic HEMT technology

F Thome, F Schäfer, S Türk… - IEEE Microwave and …, 2021 - ieeexplore.ieee.org
This letter presents a 67–116-GHz low-noise amplifier (LNA) module with state-of-the-art
cryogenic noise performance. The LNA is based on a monolithic microwave integrated …

Broadband MMIC LNAs for ALMA band 2+ 3 with noise temperature below 28 K

D Cuadrado-Calle, D George, GA Fuller… - IEEE Transactions …, 2017 - ieeexplore.ieee.org
Recent advancements in transistor technology, such as the 35 nm InP HEMT, allow for the
development of monolithic microwave integrated circuit (MMIC) low noise amplifiers (LNAs) …

Noise measurements of discrete HEMT transistors and application to wideband very low-noise amplifiers

AH Akgiray, S Weinreb, R Leblanc… - IEEE Transactions …, 2013 - ieeexplore.ieee.org
The noise models of InP and GaAs HEMTs are compared with measurements at both 300
and 20 K. The critical parameter, Tdrain, in the Pospieszalski noise model is determined as …

New technologies driving decade-bandwidth radio astronomy: quad-ridged flared horn and compound-semiconductor LNAs

AH Akgiray - 2013 - thesis.library.caltech.edu
Among the branches of astronomy, radio astronomy is unique in that it spans the largest
portion of the electromagnetic spectrum, eg, from about 10 MHz to 300 GHz. On the other …

DC Power-Optimized Ka-Band GaN-on-Si Low-Noise Amplifier With 1.5 dB Noise Figure

L Pace, PE Longhi, W Ciccognani… - IEEE Microwave and …, 2022 - ieeexplore.ieee.org
A Ka-band low-noise amplifier for low-consumption robust receivers is presented in this
letter. The monolithic microwave integrated circuit (MMIC) is designed on a 100 nm GaN-on …

A 75–116-GHz LNA with 23-K noise temperature at 108 GHz

M Varonen, R Reeves, P Kangaslahti… - 2013 IEEE MTT-S …, 2013 - ieeexplore.ieee.org
In this paper we present the design and measurement results, both on-wafer and in
package, of an ultra-low-noise and wideband monolithic microwave integrated circuit …

Argus: a 16-pixel millimeter-wave spectrometer for the Green Bank Telescope

M Sieth, K Devaraj, P Voll, S Church… - … , and Far-Infrared …, 2014 - spiedigitallibrary.org
We report on the development of Argus, a 16-pixel spectrometer, which will enable fast
astronomical imaging over the 85–116 GHz band. Each pixel includes a compact …

Technologies, design, and applications of low-noise amplifiers at millimetre-wave: State-of-the-art and perspectives

PE Longhi, L Pace, S Colangeli, W Ciccognani, E Limiti - Electronics, 2019 - mdpi.com
An overview of applicable technologies and design solutions for monolithic microwave
integrated circuit (MMIC) low-noise amplifiers (LNAs) operating at millimeter-wave are …