Analytical drain current model development of twin gate TFET in subthreshold and super threshold regions
In this work, an analytical model for a twin gate Tunnel Field Effect Transistor's drain current
operating in the subthreshold and superthreshold regions is proposed. Using this drain …
operating in the subthreshold and superthreshold regions is proposed. Using this drain …
Compact drain current model of a double-gate raised buried oxide TFET for integrated circuit application
S Meriga, B Bhowmick - Journal of Computational Electronics, 2023 - Springer
A compact model for the drain current of a double-gate tunnel field-effect transistor (TFET)
operating in the subthreshold and super-threshold regions is proposed in this paper. Using …
operating in the subthreshold and super-threshold regions is proposed in this paper. Using …
Compact model for L-shaped tunnel field-effect transistor including the 2D region
The L-shaped tunneling field-effect transistor (LTFET) is the only line-tunneling type of TFET
to be experimentally demonstrated. To date, there is no literature available on the compact …
to be experimentally demonstrated. To date, there is no literature available on the compact …
Drain current model for a hetero‐dielectric single gate tunnel field effect transistor (HDSG TFET)
Tunnel field effect transistor (TFET) is a potential candidate to replace CMOS in deep‐
submicron region due to its lower SS (subthreshold swing,< 60 mV/decade) at room …
submicron region due to its lower SS (subthreshold swing,< 60 mV/decade) at room …
Study of Electrical Performance of Hetero-Dielectric Gate Tunnel Field Effect Transistor (HDG TFET): A Novel Structure for Future Nanotechnology: Manuscript …
Although, dynamic power in portable mobile devices can be reduced by reducing power
supply V DD on the cost of increased leakage current. Therefore, maintaining low leakage …
supply V DD on the cost of increased leakage current. Therefore, maintaining low leakage …