Conduction mechanisms, dynamics and stability in ReRAMs

C Wang, H Wu, B Gao, T Zhang, Y Yang… - Microelectronic …, 2018 - Elsevier
Though resistive random access memory (ReRAM), a promising emerging memory
technology, has achieved remarkable progress in technology development in recent years …

Filament growth and resistive switching in hafnium oxide memristive devices

S Dirkmann, J Kaiser, C Wenger… - ACS applied materials …, 2018 - ACS Publications
We report on the resistive switching in TiN/Ti/HfO2/TiN memristive devices. A resistive
switching model for the device is proposed, taking into account important experimental and …

Memristive stochastic plasticity enables mimicking of neural synchrony: Memristive circuit emulates an optical illusion

M Ignatov, M Ziegler, M Hansen, H Kohlstedt - Science advances, 2017 - science.org
The human brain is able to integrate a myriad of information in an enormous and massively
parallel network of neurons that are divided into functionally specialized regions such as the …

Field-induced nucleation in threshold switching characteristics of electrochemical metallization devices

J Yoo, J Park, J Song, S Lim, H Hwang - Applied Physics Letters, 2017 - pubs.aip.org
In this research, we investigate electrically driven threshold switching (TS) characteristics in
electrochemical metallization cells by adopting the field-induced nucleation theory. For this …

Analogue pattern recognition with stochastic switching binary CMOS-integrated memristive devices

F Zahari, E Pérez, MK Mahadevaiah, H Kohlstedt… - Scientific reports, 2020 - nature.com
Biological neural networks outperform current computer technology in terms of power
consumption and computing speed while performing associative tasks, such as pattern …

Implementation of dropout neuronal units based on stochastic memristive devices in neural networks with high classification accuracy

HM Huang, Y Xiao, R Yang, YT Yu, HK He… - Advanced …, 2020 - Wiley Online Library
Neural networks based on memristive devices have achieved great progress recently.
However, memristive synapses with nonlinearity and asymmetry seriously limit the …

Computational Study on Filament Growth Dynamics in Microstructure-Controlled Storage Media of Resistive Switching Memories

P Xu, W Fa, S Chen - ACS nano, 2023 - ACS Publications
The filament growth processes, crucial to the performance of nanodevices like resistive
switching memories, have been widely investigated to realize the device optimization. With …

Double-barrier memristive devices for unsupervised learning and pattern recognition

M Hansen, F Zahari, M Ziegler… - Frontiers in neuroscience, 2017 - frontiersin.org
The use of interface-based resistive switching devices for neuromorphic computing is
investigated. In a combined experimental and numerical study, the important device …

The role of ion transport phenomena in memristive double barrier devices

S Dirkmann, M Hansen, M Ziegler, H Kohlstedt… - Scientific reports, 2016 - nature.com
In this work we report on the role of ion transport for the dynamic behavior of a double barrier
quantum mechanical Al/Al2O3/NbxOy/Au memristive device based on numerical simulations …

Stochastic behavior of an interface-based memristive device

S Yarragolla, T Hemke, J Trieschmann… - Journal of Applied …, 2022 - pubs.aip.org
A large number of simulation models have been proposed over the years to mimic the
electrical behavior of memristive devices. The models are based either on sophisticated …