Alloy clustering and consequent carrier localization in InGaN alloys are important aspects
with large effect in materials' optoelectronic properties and related device operation. Their …

We report on the bottom-up fabrication, by plasma-assisted molecular beam epitaxy, of
monocrystalline GaN solid, hollow, and c-shape nanowires deposited in a compact fashion …

The main results of a complete study by Transmission and Scanning-Transmission Electron
Microscopies ((S) TEM) are described for (i) InGaN/Si (111) heterostructures in the whole …

This work studies the effect of four different types of buffer layers on the structural and optical
properties of InGaN layers grown on Si (111) substrates and their correlation with electrical …

During this work the constituent functional blocks of a InGaN/Si-based solar-assisted water
splitting cell were obtained by molecular beam epitaxy, which includes:-Compact and …

In this thesis the Plasma-Assisted Molecular Beam Epitaxy (PA-MBE) growth and
characteristics of different families of III-N semiconductors are discussed. The two main …

We show a flux dependence changes in structural, optical and electronic properties of In x
Ga 1-x N nanostructures (NSs) namely nanocolumns (NCs), nanoflakes (NFs) and nanowall …

Due to the inadequacy of a single solar cell to absorb light over the full solar spectrum, a
stack of multiple sub-cells (multijunction) have been proposed and studied intensively …

En este trabajo hemos crecido los bloques funcionales que constituyen un dispositivo
fotovoltaico basado en la familia de semiconductores compuestos conocidad como los …