White light‐emitting diodes: history, progress, and future
About twenty years ago, in the autumn of 1996, the first white light‐emitting diodes (LEDs)
were offered for sale. These then‐new devices ushered in a new era in lighting by …
were offered for sale. These then‐new devices ushered in a new era in lighting by …
[HTML][HTML] III-nitride nanowires on unconventional substrates: From materials to optoelectronic device applications
Group-III nitrides and their alloys feature direct bandgaps covering a broad range of the
electromagnetic spectrum, making them a promising material system for various …
electromagnetic spectrum, making them a promising material system for various …
Three-dimensional direct lithography of stable perovskite nanocrystals in glass
Material composition engineering and device fabrication of perovskite nanocrystals (PNCs)
in solution can introduce organic contamination and entail several synthetic, processing …
in solution can introduce organic contamination and entail several synthetic, processing …
Electrically driven mid-submicrometre pixelation of InGaN micro-light-emitting diode displays for augmented-reality glasses
J Park, JH Choi, K Kong, JH Han, JH Park, N Kim… - Nature …, 2021 - nature.com
Abstracte InGaN-based blue light-emitting diodes (LEDs), with their high efficiency and
brightness, are entering the display industry. However, a significant gap remains between …
brightness, are entering the display industry. However, a significant gap remains between …
Growth of single crystal III-V semiconductors on amorphous substrates
This disclosure provides systems, methods, and apparatus related to the growth of single
crystal III-V semiconductors on amorphous substrates. In one aspect, a shape of a …
crystal III-V semiconductors on amorphous substrates. In one aspect, a shape of a …
Improved epitaxy of AlN film for deep‐ultraviolet light‐emitting diodes enabled by graphene
The growth of single‐crystal III‐nitride films with a low stress and dislocation density is
crucial for the semiconductor industry. In particular, AlN‐derived deep‐ultraviolet light …
crucial for the semiconductor industry. In particular, AlN‐derived deep‐ultraviolet light …
Van der Waals epitaxy of nearly single-crystalline nitride films on amorphous graphene-glass wafer
Van der Waals epitaxy provides a fertile playground for the monolithic integration of various
materials for advanced electronics and optoelectronics. Here, a previously unidentified …
materials for advanced electronics and optoelectronics. Here, a previously unidentified …
Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle
There have been rapidly increasing demands for flexible lighting apparatus, and micrometer-
scale light-emitting diodes (LEDs) are regarded as one of the promising lighting sources for …
scale light-emitting diodes (LEDs) are regarded as one of the promising lighting sources for …
Selective-area growth of GaN nanocolumns on Si (111) substrates for application to nanocolumn emitters with systematic analysis of dislocation filtering effect of …
K Kishino, S Ishizawa - Nanotechnology, 2015 - iopscience.iop.org
The growth of highly uniform arrays of GaN nanocolumns with diameters from 122 to 430 nm
on Si (111) substrates was demonstrated. The employment of GaN film templates with flat …
on Si (111) substrates was demonstrated. The employment of GaN film templates with flat …
Temperature-dependent photoluminescence in light-emitting diodes
T Lu, Z Ma, C Du, Y Fang, H Wu, Y Jiang, L Wang… - Scientific reports, 2014 - nature.com
Abstract Temperature-dependent photoluminescence (TDPL), one of the most effective and
powerful optical characterisation methods, is widely used to investigate carrier transport and …
powerful optical characterisation methods, is widely used to investigate carrier transport and …