Structural and electrical properties of atomic layer deposited Al‐doped ZnO films

DJ Lee, HM Kim, JY Kwon, H Choi… - Advanced Functional …, 2011 - Wiley Online Library
Structural and electrical properties of Al‐doped ZnO (AZO) films deposited by atomic layer
deposition (ALD) are investigated to study the extrinsic doping mechanism of a transparent …

Electron transport in dye-sensitized solar cells based on ZnO nanotubes: evidence for highly efficient charge collection and exceptionally rapid dynamics

ABF Martinson, MS Goes… - The Journal of …, 2009 - ACS Publications
Dye-sensitized solar cells based on ordered arrays of polycrystalline ZnO nanotubes, 64 μm
in length, are shown to exhibit efficient electron collection over the entire photoanode array …

ALD grown zinc oxide with controllable electrical properties

E Guziewicz, M Godlewski, L Wachnicki… - Semiconductor …, 2012 - iopscience.iop.org
The paper presents results for zinc oxide films grown at low-temperature regime by atomic
layer deposition (ALD). We discuss electrical properties of such films and show that low …

ZnO 1D nanostructures designed by combining atomic layer deposition and electrospinning for UV sensor applications

A Abou Chaaya, M Bechelany, S Balme… - Journal of Materials …, 2014 - pubs.rsc.org
We explored for the first time the ability of a three-dimensional polyacrylonitrile/ZnO material
prepared by a low-cost and scalable synthesis method based on the combination of …

[HTML][HTML] ZnO grown by atomic layer deposition: A material for transparent electronics and organic heterojunctions

E Guziewicz, M Godlewski, T Krajewski… - Journal of Applied …, 2009 - pubs.aip.org
We report on zinc oxide thin films grown by atomic layer deposition at a low temperature,
which is compatible with a low thermal budget required for some novel electronic devices …

Atomic-layer-deposition of indium oxide nano-films for thin-film transistors

Q Ma, HM Zheng, Y Shao, B Zhu, WJ Liu… - Nanoscale research …, 2018 - Springer
Abstract Atomic-layer-deposition (ALD) of In 2 O 3 nano-films has been investigated using
cyclopentadienyl indium (InCp) and hydrogen peroxide (H 2 O 2) as precursors. The In 2 O 3 …

Characteristics of the ZnO thin film transistor by atomic layer deposition at various temperatures

S Kwon, S Bang, S Lee, S Jeon, W Jeong… - Semiconductor …, 2009 - iopscience.iop.org
ZnO thin films were deposited by atomic layer deposition (ALD) at various temperatures and
the resulting electrical and chemical properties were examined. The fraction of O–H bonds …

[HTML][HTML] Evolution of microstructure and related optical properties of ZnO grown by atomic layer deposition

A Abou Chaaya, R Viter, M Bechelany… - Beilstein journal of …, 2013 - beilstein-journals.org
A study of transmittance and photoluminescence spectra on the growth of oxygen-rich ultra-
thin ZnO films prepared by atomic layer deposition is reported. The structural transition from …

Artificial semiconductor/insulator superlattice channel structure for high-performance oxide thin-film transistors

CH Ahn, K Senthil, HK Cho, SY Lee - Scientific reports, 2013 - nature.com
High-performance thin-film transistors (TFTs) are the fundamental building blocks in
realizing the potential applications of the next-generation displays. Atomically controlled …

Fabrication conditions for solution-processed high-mobility ZnO thin-film transistors

C Li, Y Li, Y Wu, BS Ong, RO Loutfy - Journal of Materials Chemistry, 2009 - pubs.rsc.org
Stable, solution-processed, non-toxic, high-mobility thin-film semiconductors are required for
fabricating low-cost thin-film transistor (TFT) arrays and circuits to enable ubiquitous large …