Corrugated heterojunction metal‐oxide thin‐film transistors with high electron mobility via vertical interface manipulation
M Lee, JW Jo, YJ Kim, S Choi, SM Kwon… - Advanced …, 2018 - Wiley Online Library
A new strategy is reported to achieve high‐mobility, low‐off‐current, and operationally stable
solution‐processable metal‐oxide thin‐film transistors (TFTs) using a corrugated …
solution‐processable metal‐oxide thin‐film transistors (TFTs) using a corrugated …
Fabrication of high-performance p-type thin film transistors using atomic-layer-deposited SnO films
Here, we demonstrate high-performance p-type thin film transistors (TFTs) with a SnO
channel layer grown by atomic layer deposition (ALD). The performance of the SnO TFTs …
channel layer grown by atomic layer deposition (ALD). The performance of the SnO TFTs …
Readily Accessible Metallic Micro‐Island Arrays for High‐Performance Metal Oxide Thin‐Film Transistors
Thin‐film transistors using metal oxide semiconductors are essential in many
unconventional electronic devices. Nevertheless, further advances will be necessary to …
unconventional electronic devices. Nevertheless, further advances will be necessary to …
High-performance thin-film transistors of quaternary indium–zinc–tin oxide films grown by atomic layer deposition
A new deposition technique is required to grow the active oxide semiconductor layer for
emerging oxide electronics beyond the conventional sputtering technique. Atomic layer …
emerging oxide electronics beyond the conventional sputtering technique. Atomic layer …
Effect of channel thickness on electrical performance of amorphous IGZO thin-film transistor with atomic layer deposited alumina oxide dielectric
Y Li, YL Pei, RQ Hu, ZM Chen, Y Zhao, Z Shen… - Current Applied …, 2014 - Elsevier
We have investigated the electrical performance of amorphous indium–gallium–zinc oxide
(α-IGZO) thin-film transistors with various channel thicknesses. It is observed that when the α …
(α-IGZO) thin-film transistors with various channel thicknesses. It is observed that when the α …
Effect of Back-Channel Surface on Reliability of Solution-Processed In0.51Ga0.15Zn0.34O Thin-Film Transistors with Thin Active Layer
We have investigated the degradation mechanism of solution-processed indium–gallium–
zinc-oxide (IGZO) thin-film transistors. The threshold voltage shift (Δ V th) followed a linear …
zinc-oxide (IGZO) thin-film transistors. The threshold voltage shift (Δ V th) followed a linear …
Complementary oxide–semiconductor-based circuits with n-channel ZnO and p-channel SnO thin-film transistors
Fully oxide thin-film transistor (TFT)-based complementary metal-oxide-semiconductor
(CMOS) ring oscillators are reported, for the first time, using large-area-compatible …
(CMOS) ring oscillators are reported, for the first time, using large-area-compatible …
A systematic study on effects of precursors and solvents for optimization of solution-processed oxide semiconductor thin-film transistors
Solution-processed oxide semiconductor thin-film transistors (OS TFTs) have attracted much
attention as a future display technology, because they have intrinsic properties such as …
attention as a future display technology, because they have intrinsic properties such as …
High mobility, dual layer, c-axis aligned crystalline/amorphous IGZO thin film transistor
We demonstrate a dual layer IGZO thin film transistor (TFT) consisting of a 310 C deposited c-
axis aligned crystal (CAAC) 20 nm thick channel layer capped by a second, 30 nm thick, 260 …
axis aligned crystal (CAAC) 20 nm thick channel layer capped by a second, 30 nm thick, 260 …
Electrical characterization of a-InGaZnO thin-film transistors with Cu source/drain electrodes
J Jeong, G Jun Lee, J Kim, B Choi - Applied Physics Letters, 2012 - pubs.aip.org
We analyzed the effects of Cu source/drain (S/D) electrodes on the performance of a-
InGaZnO (a-IGZO) thin-film transistors (TFTs). Owing to the Cu migration, the parasitic …
InGaZnO (a-IGZO) thin-film transistors (TFTs). Owing to the Cu migration, the parasitic …