Ultrawide-bandgap semiconductor AlN crystals: growth and applications
R Yu, G Liu, G Wang, C Chen, M Xu, H Zhou… - Journal of Materials …, 2021 - pubs.rsc.org
In recent years, ultrawide bandgap semiconductor materials represented by aluminum
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …
First‐principles theory of acceptors in nitride semiconductors
Acceptor defects and impurities play a critical role in the performance of GaN‐based
devices. Mg is the only acceptor impurity that gives rise to p‐type conductivity, while other …
devices. Mg is the only acceptor impurity that gives rise to p‐type conductivity, while other …
High thermal conductivity of submicrometer aluminum nitride thin films sputter-deposited at low temperature
Aluminum nitride (AlN) is one of the few electrically insulating materials with excellent
thermal conductivity, but high-quality films typically require exceedingly hot deposition …
thermal conductivity, but high-quality films typically require exceedingly hot deposition …
Experimental observation of high intrinsic thermal conductivity of AlN
Wurtzite AlN is an ultrawide bandgap semiconductor that has been developed for
applications including power electronics and optoelectronics. Thermal management of these …
applications including power electronics and optoelectronics. Thermal management of these …
[HTML][HTML] Thermal conductivity of crystalline AlN and the influence of atomic-scale defects
Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet
photonics, where an understanding of its thermal properties is essential. Here, we measure …
photonics, where an understanding of its thermal properties is essential. Here, we measure …
[HTML][HTML] Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
In order to understand the influence of dislocations on doping and compensation in Al-rich
AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on …
AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on …
[HTML][HTML] On compensation in Si-doped AlN
Controllable n-type doping over wide ranges of carrier concentrations in AlN, or Al-rich
AlGaN, is critical to realizing next-generation applications in high-power electronics and …
AlGaN, is critical to realizing next-generation applications in high-power electronics and …
Doping of III-nitride materials
P Pampili, PJ Parbrook - Materials Science in Semiconductor Processing, 2017 - Elsevier
In this review paper we will report the current state of research regarding the doping of III-
nitride materials and their alloys. GaN is a mature material with both n-type and p-type …
nitride materials and their alloys. GaN is a mature material with both n-type and p-type …
Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength
In this article, the development of mid-UV laser diodes based on the AlGaN materials system
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
A brief review of III-nitride UV emitter technologies and their applications
M Kneissl - III-Nitride Ultraviolet Emitters: Technology and …, 2016 - Springer
This chapter provides a brief introduction to group III-nitride ultraviolet light emitting diode
(LED) technologies and an overview of a number of key application areas for UV-LEDs. It …
(LED) technologies and an overview of a number of key application areas for UV-LEDs. It …