Porous nitride semiconductors are a fast-developing area of study, which open up a wide
range of new properties and applications, including strain free optical reflectors, chemical …

In this review paper, we present a comparative analysis of the electrochemical dissolution of
III–V (InP, GaAs, GaN), II–VI (ZnSe, CdSe) and SiC semiconductor compounds. The …

A comparative study of the anodization processes occurring at the GaAs (111) A and GaAs
(111) B surfaces exposed to electrochemical etching in neutral NaCl and acidic HNO 3 …

Heterogeneously integrated AlGaN epitaxial layers will be essential for future optical and
electrical devices like thin-film flip-chip ultraviolet (UV) light-emitting diodes, UV vertical …

Semiconductor nano-membranes provide a new way to develop optical devices with better
performance. Herein, we report a fabrication method of GaN-based LED membranes with a …

Highly reflective and conductive distributed Bragg reflectors (DBRs) are the key for high-
performance III-nitride optoelectronic devices, such as vertical cavity surface emitting lasers …

III-nitride membranes offer promising perspectives and improved device designs in
photonics, electronics, and optomechanics. However, the removal of the growth substrate …

We report a systematic electrochemical study that allows fine-tuning of the pore formation
process in gallium nitride (GaN). We have investigated several parameters of pore …

To study the nature of electrochemical property of III-nitrides, we examined here the
behaviour of a n-GaN anodic oxidation reaction within a voltage range of 5–20 V in …

Nanosized pores were introduced into GaN epitaxial films via electrochemical (EC) etching
in strong electrolytes including NaOH, HNO 3, NaNO 3, and NaCl. The growth behaviors of …