Investigating the valence-band bound states in GaAs/GaAsSb/GaAs V-shaped quantum wells: the role of intense laser fields and position-dependent effective mass
S Maleki, A Haghighatzadeh, A Attarzadeh… - Physica E: Low …, 2022 - Elsevier
This theoretical study investigated the valence-band electronic features in
GaAs/GaAsSb/GaAs V-shaped quantum wells. Accordingly, an analytical relation has been …
GaAs/GaAsSb/GaAs V-shaped quantum wells. Accordingly, an analytical relation has been …
Optimization of Type-II AlAs/AlInAs/GaAsSb Heterostructure at 1550 nm Under wWell-Width Variation
A W-shaped type-II AlAs/Al0. 3In0. 7As/GaAs0. 1Sb0. 9 lasing nanoscale heterostructure is
designed for near infrared emission. The Luttinger kohn 6* 6 model is used to compute …
designed for near infrared emission. The Luttinger kohn 6* 6 model is used to compute …
Optical Investigation of p‐GaAs/i‐GaN0.38yAs1-1.38ySby/n‐GaAs Quantum Wells Emitters
I Guizani, C Bilel, M Alrowaili… - Journal of …, 2022 - Wiley Online Library
We have studied the 1.55 m optical properties of p-GaAs/i-GaN0. 38yAs1-1.38 ySby/n-GaAs
quantum wells using a self-consistent calculation combined with the anticrossing model. We …
quantum wells using a self-consistent calculation combined with the anticrossing model. We …