We propose in this letter a new passivation method to get rid of parasitic surface conduction
in oxidized high resistivity (HR) silicon and HR silicon-on-insulator (SOI) wafers. The method …

We present a silicon photonic traveling-wave Mach-Zehnder modulator operating near 1550
nm with a 3-dB bandwidth of 35 GHz. A detailed analysis of travelingwave electrode …

The present disclosure relates to enhancing the thermal performance of encapsulated flip
chip dies. According to an exemplary process, a plurality of flip chip dies are attached on a …

In this paper, the nonlinear behavior of coplanar waveguide (CPW) transmission lines
fabricated on Si and high-resistivity (HR) Si substrates is thoroughly investigated …

We introduce in this work a new quality factor called effective resistivity (ρeff), which is used
to characterize and fairly compare the substrate resistivity of fully processed SOI wafers. The …

(57) ABSTRACT A semiconductor device and methods for manufacturing the same are
disclosed. The semiconductor device includes a polymer substrate and an interfacial layer …

In this paper we present a novel metamaterial-based antenna simulated using HFSS. The
unit cell parameters were extracted using periodic boundary conditions and wave-port …

GaN high electron mobility transistors (HEMTs) were monolithically integrated with silicon
CMOS to create a functional current mirror circuit. The integrated circuit was fabricated on …

A flip chip module having at least one flip chip die is disclosed. The flip chip module includes
a carrier having a top surface with a first mold compound residing on the top surface. A first …

This disclosure relates to integrated circuit (IC) packages and methods of manufacturing the
same. In one method, a printed circuit board is provided with semiconductor die. The …