We report MOCVD-grown NpN InP/GaAsSb/InP abrupt double heterojunction bipolar
transistors (DHBTs) with simultaneous values of f/sub T/and f/sub MAX/as high as 300 GHz …

We report on the physical operation and performance of MOCVD-grown abrupt
heterojunction InP/GaAs/sub 0.51/Sb/sub 0.49//InP double heterojunction bipolar transistors …

We present the results of Hall measurements on heavily carbon-doped GaAsSb epilayers
grown by metalorganic chemical vapour deposition (MOVPE) on InP substrates. An …

The minority electron transport is crucial for the performances of heterojunction bipolar
transistors HBTs. Among the III-V semiconductors family, GaAsSb exhibits several …

A multiscale technology computer-aided design (TCAD) simulation methodology is
presented to calculate the intrinsic transit time of InP double heterojunction bipolar …

In this paper, we report on the electrical and optical properties of undoped GaSb samples
grown by MBE using Sb1 as well as Sb2 produced in a conventional antimony cracker. We …

We study the effect of non-ideal surface conditions on the characteristics of submicrometer
type-II InP/GaAsSb double heterostructure bipolar transistors (DHBTs) by comparing two …

InAs/AlGaAsSb deep quantum well was successfully formed on GaAs substrate and
examined for two electron devices, Hall elements (HEs), and field-effect transistors (FETs) …

This article details the applicability of a thin-film piezotronic bipolar junction transistor as a
wearable energy harvester that is capable of signal rectification without any extra and …

DC and RF characteristics of InP/InAlAs/GaAsSb/InP double heterojunction bipolar
transistors (DHBTs) are reported. The device heterostructures include InAlAs spacer layer …