A 219-to-231 GHz frequency-multiplier-based VCO with~ 3% peak DC-to-RF efficiency in 65-nm CMOS
Signal sources at mm-wave and (sub-) terahertz frequencies in CMOS can be classified into
two broad categories: harmonic oscillators and oscillators that are based on the frequency …
two broad categories: harmonic oscillators and oscillators that are based on the frequency …
High-power and high-efficiency millimeter-wave harmonic oscillator design, exploiting harmonic positive feedback in CMOS
R Kananizadeh, O Momeni - IEEE Transactions on Microwave …, 2017 - ieeexplore.ieee.org
Based on time-variant behavior of metal-oxide-semiconductor field-effect transistors in large-
signal operations, harmonic translations and their mutual effects are analyzed. Large …
signal operations, harmonic translations and their mutual effects are analyzed. Large …
A W-band high-efficiency CMOS differential current-reused frequency doubler
A W-band differential frequency doubler using a current-reuse configuration in a 65 nm
CMOS process is presented in this letter. The differential current-reuse circuit with a second …
CMOS process is presented in this letter. The differential current-reuse circuit with a second …
A D-Band Frequency-Doubling Traveling-Wave Amplifier Through Monolithic Integration of a SiC SIW and GaN HEMTs
We report a solid-state traveling-wave amplifier (TWA) realized through monolithic
integration of transistors with a SiC substrate-integrated waveguide (SIW). The TWA uses a …
integration of transistors with a SiC substrate-integrated waveguide (SIW). The TWA uses a …
A 120-GHz Class-F Frequency Doubler With 7.8-dBm POUT in 55-nm Bulk CMOS
This article analyzes the 2nd-order harmonic power generation with power level boosted by
fundamental and 3rd-order harmonic based on the Krummenacher–Vittoz (EKV) models …
fundamental and 3rd-order harmonic based on the Krummenacher–Vittoz (EKV) models …
A Compact 180-GHz Stacked-FET Oscillator With 11-dBm Output Power and 13.9% DC-to-RF Efficiency in a 45-nm CMOS SOI Process
We present an oscillator design based on stacked-FET for high-power terahertz (THz) signal
generation in CMOS technologies. This design addresses the challenges commonly …
generation in CMOS technologies. This design addresses the challenges commonly …
Research on Silicon‐Based Terahertz Communication Integrated Circuits
P ZHOU, J CHEN, S TANG, J YU… - Chinese Journal of …, 2022 - Wiley Online Library
With the increasing number of users and emerging new applications, the demand for mobile
data traffic is growing rapidly. The limited spectrum resources of the traditional microwave …
data traffic is growing rapidly. The limited spectrum resources of the traditional microwave …
A compact 105–130 GHz push-push doubler, with 4dBm Psat and 18% efficiency in 28nm CMOS
N Oz, E Cohen - 2015 10th European Microwave Integrated …, 2015 - ieeexplore.ieee.org
A high power doubler design for F-band frequencies, which covers 105-130 GHz, has been
designed in low voltage process 1.1 V, 28nm CMOS. A new approach for shorting the 2nd …
designed in low voltage process 1.1 V, 28nm CMOS. A new approach for shorting the 2nd …
Ku-band to F-band active multiplier chain in 65-nm CMOS
B Khamaisi, E Socher - 2016 11th European Microwave …, 2016 - ieeexplore.ieee.org
A compact single chip X9 frequency multiplier from Ku-band to F-band implemented in 65-
nm CMOS is presented. A chain of transformer coupled stages is used, including two triplers …
nm CMOS is presented. A chain of transformer coupled stages is used, including two triplers …
A 100–123GHz CMOS frequency doubler with 5.5 dBm output power and high fundamental rejection
This paper presents a frequency doubler that operates at W-band and D-band frequencies
between 100GHz to 123GHz. An optimized buffering method is proposed to achieve …
between 100GHz to 123GHz. An optimized buffering method is proposed to achieve …