Self-forming barriers for copper (Cu) interconnect metallization are well developed.
However, the self-forming-barrier process and associated electromigration behaviors of …

Copper/SiO2/Si metal-oxide-semiconductor (MOS) devices both with and without a MnSiO3
barrier layer at the Cu/SiO2 interface have been fabricated in an ultrahigh vacuum X-ray …

In this work x-ray photoelectron spectroscopy is used to investigate in-vacuo, the interaction
of metallic manganese with a (3-trimethoxysilylpropyl) diethylenetriamine (DETA) self …

For the implementation of copper and low-k materials into a tight pitch damascene
interconnect architecture it is important to understand and correctly describe the underlying …

Annealing of MnO@ SiO2 nanospheres in a reducing gas environment resulted in the
transformation of the core–shell structure into a hollow structure as a result of outward …

A self-forming diffusion barrier (SFB) layer was formed at Cu–Mn/SiO 2 interface. Spatial
variation of the chemical composition and valence state of the elements in the SFB was …

Mn/Cu heterostructures thermally evaporated onto SiO 2 and, subsequently, annealed were
investigated by transmission electron microscopy related techniques in order to study the …

A diffusion barrier layer of a few nanometers in thickness is required for a Cu/SiO_2
interconnect structure for advanced integrated circuits (ICs). This paper reports a new barrier …

Manganese oxide formed by a chemical vapor deposition (CVD) method is a promising
candidate for an ultrathin diffusion barrier layer in the interconnect structure of advanced …

In this study, Mn silicate (MnSiO 3) barrier layers were formed on thermally grown SiO 2
using both metallic Mn and oxidized Mn films, in order to investigate the role of oxygen in …