Hafnium oxide (HfO2) is one of the mature high‐k dielectrics that has been standing strong
in the memory arena over the last two decades. Its dielectric properties have been …

At the end of a rush lasting over half a century, in which CMOS technology has been
experiencing a constant and breathtaking increase of device speed and density, Moore's …

The critical size limit of voltage-switchable electric dipoles has extensive implications for
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …

Ultrathin ferroelectric materials could potentially enable low-power logic and nonvolatile
memories,. As ferroelectric materials are made thinner, however, the ferroelectricity is …

Ferroelectric domain wall memories have been proposed as a promising candidate for
nonvolatile memories, given their intriguing advantages including low energy consumption …

Advances in complex oxide heteroepitaxy have highlighted the enormous potential of
utilizing strain engineering via lattice mismatch to control ferroelectricity in thin-film …

Complex oxides are record holder materials for many phenomena, including ferroelectricity,
piezoelectricity, superconductivity and multiferroicity. Complex oxides often have competing …

We report that crystalline phases with ferroelectric behavior can be formed in thin films of
SiO 2 doped hafnium oxide. Films with a thickness of 10 nm and with less than 4 mol.% of …

The stability of spontaneous electrical polarization in ferroelectrics is fundamental to many of
their current applications, which range from the simple electric cigarette lighter to non …

Complex oxides, such as ABO 3 perovskites, are an important class of functional materials
that exhibit a wide range of physical, chemical, and electrochemical properties, including …