[PDF][PDF] Recent progress in metal-organic chemical vapor deposition of N-polar group-III nitrides
Progress in metal-organic chemical vapor deposition of high quality () 0001 N-polar (Al, Ga,
In) N films on sapphire, silicon carbide and silicon substrates is reviewed with focus on key …
In) N films on sapphire, silicon carbide and silicon substrates is reviewed with focus on key …
N-polar GaN epitaxy and high electron mobility transistors
This paper reviews the progress of N-polar ($000\mathop 1\limits^\_ $) GaN high frequency
electronics that aims at addressing the device scaling challenges faced by GaN high …
electronics that aims at addressing the device scaling challenges faced by GaN high …
Liquid metal composites with enhanced thermal conductivity and stability using molecular thermal linker
Gallium‐based liquid metal (LM) composite with metallic fillers is an emerging class of
thermal interface materials (TIMs), which are widely applied in electronics and power …
thermal interface materials (TIMs), which are widely applied in electronics and power …
Surface‐Polarity‐Induced Spatial Charge Separation Boosts Photocatalytic Overall Water Splitting on GaN Nanorod Arrays
Photocatalytic overall water splitting has been recognized as a promising approach to
convert solar energy into hydrogen. However, most of the photocatalysts suffer from low …
convert solar energy into hydrogen. However, most of the photocatalysts suffer from low …
Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy
B Heying, R Averbeck, LF Chen, E Haus… - Journal of Applied …, 2000 - pubs.aip.org
The characteristic surface morphologies of GaN grown by plasma-assisted molecular beam
epitaxy under various growth conditions have been investigated. Three growth regimes one …
epitaxy under various growth conditions have been investigated. Three growth regimes one …
Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates
Excess reverse-bias leakage in GaN films grown by molecular beam epitaxy on GaN
templates is correlated with the presence of pure screw dislocations. A scanning current …
templates is correlated with the presence of pure screw dislocations. A scanning current …
Structure of GaN (0001): The laterally contracted Ga bilayer model
We discuss the energetics and structure of a laterally contracted Ga bilayer model for the Ga-
rich pseudo-1× 1 phase of the GaN (0001) surface. First-principles total energy calculations …
rich pseudo-1× 1 phase of the GaN (0001) surface. First-principles total energy calculations …
Molecular beam epitaxy growth of GaN, AlN and InN
X Wang, A Yoshikawa - Progress in crystal growth and characterization of …, 2004 - Elsevier
III-Nitrides receive much research attention and obtain significant development due to their
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …
GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance
PK Kandaswamy, F Guillot, E Bellet-Amalric… - Journal of Applied …, 2008 - pubs.aip.org
We have studied the effect of growth and design parameters on the performance of Si-doped
GaN/AlN multiquantum-well (MQW) structures for intersubband optoelectronics in the near …
GaN/AlN multiquantum-well (MQW) structures for intersubband optoelectronics in the near …
Inversion of wurtzite GaN (0001) by exposure to magnesium
V Ramachandran, RM Feenstra, WL Sarney… - Applied Physics …, 1999 - pubs.aip.org
Magnesium incorporation during the molecular-beam epitaxy growth of wurtzite GaN is
found to invert the Ga-polar (0001) face to the N-polar face. The polarity is identified based …
found to invert the Ga-polar (0001) face to the N-polar face. The polarity is identified based …