The demand for high‐performance displays is continuously increasing because of their wide
range of applications in smart devices (smartphones/watches), augmented reality, virtual …

GaN-based light-emitting devices have the potential to realize all visible emissions with the
same material system. These emitters are expected to be next-generation red, green, and …

Ultra-small red micro-LEDs (< 10 μm) with measurable output power have proved difficult to
demonstrate. The smallest state-of-the-art red micro-LEDs (AlInGaP) to have exhibited a …

Micro light-emitting diode (micro-LED) will play an important role in the future generation of
smart displays. They are found very attractive in many applications, such as maskless …

In this study, two methods to tune the emission wavelength of micro-LEDs fabricated on tile
patterned compliant GaN-on-porous-GaN pseudo-substrates (PSs) are presented. The …

GaN nanostructures hold significant promise in advancing nanoscale light‐emitting devices.
However, significant progress remains elusive, possibly due to the absence of innovative …

Red LEDs were grown by metalorganic chemical vapor deposition with a high active region
temperature of 870 C on a relaxed InGaN/GaN superlattice buffer. The buffer was 100 …

We study the desorption of In in InGaN nanowire (NW) growth on Si, generating a unique
light emitter. With increasing growth temperature above the onset of In desorption, uniform …

A highly relaxed InGaN buffer layer was demonstrated over a full two-inch c-plane sapphire
substrate by metalorganic chemical vapor deposition. The InGaN buffer layer was grown on …

Micro-LEDs have been hailed as the next generation display technology due to the
advantages of high brightness, high ambient contrast ratio, and high reliability. The In x Ga 1 …