[HTML][HTML] Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices
Metal-oxide-semiconductor (MOS) capacitors with Al2O3 as a gate insulator are fabricated
on cubic silicon carbide (3C-SiC). Al2O3 is deposited both by thermal and plasma …
on cubic silicon carbide (3C-SiC). Al2O3 is deposited both by thermal and plasma …