A memory opening can be formed through an alternating stack of insulating layers and
sacrificial material layers over a substrate. A material layer stack containing, from outside to …

Multi-gate NOR flash thin-film transistor (TFT) string arrays are organized as three
dimensional stacks of active strips. Each active strip includes a shared source sublayer and …

(57) ABSTRACT A memory structure, includes (a) active columns of poly silicon formed
above a semiconductor substrate, each active column extending vertically from the substrate …

(57) ABSTRACT A non-volatile “reverse memory cell” suitable for use as a building block for
a 3-dimensional memory array includes a charge-trapping layer which is programmed or …

A first die includes a three-dimensional memory device and first copper pads. A second die
includes a peripheral logic circuitry containing CMOS devices located on the semiconductor …

2019-01-15 Assigned to SANDISK TECHNOLOGIES LLC reassignment SANDISK
TECHNOLOGIES LLC ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR …

A memory film layer is formed in a memory opening through an alternating stack of first
material layers and second material layers. A sacrificial material layer is deposited on the …

US9230987B2 - Multilevel memory stack structure and methods of manufacturing the same
- Google Patents US9230987B2 - Multilevel memory stack structure and methods of …

(57) ABSTRACT A method of fabricating a semiconductor device, such as a three-
dimensional NAND memory string, includes forming a first stack of alternating layers of a first …

2016-03-24 Assigned to SANDISK TECHNOLOGIES INC. reassignment SANDISK
TECHNOLOGIES INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR …