The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Tunnel Field-effect transistor (TFET) is regarded as the most promising candidate which can
possibly replace the traditional MOSFET from current IC technology. It has gained much …

Abstract Tunnel Field Effect Transistors (TFETs) have emerged as serious contenders for the
replacement of traditional MOSFET technology for the future ultra low power Analog/Digital …

In this paper, a new architecture based on an intentional misalignment between the core
and shell gate is presented for the nanotube tunnel field-effect transistor (NT-TFET). The …

With the size of devices continuously shrinking, power consumption has become one of the
most critical issues concerning modern integrated circuits, which can be reduced by …

Label-free biomolecular sensors have been widely studied due to their simple operation. L-
shaped tunneling field-effect transistors (LTFETs) are used in biosensors due to their low …

Recently, a compact realization of logic gates using double-gate tunnel field effect
transistors (DGTFETs) with independently-controlled gate has been proposed. The key …

In this paper, a dual-gate silicon–germanium heterojunction vertical TFET with germanium
as the source material (HJ-VTFET) is proposed for realizing compact logic functions. A …

In this work, we demonstrate the performance enhancement of bottom-gated inductive line-
tunneling TFET (iTFET) through the integration of bilateral sidewall engineering with SiGe …

This paper presents a germanium-around-source gate-all-around tunnelling field-effect
transistor (GAS GAA TFET). The electrical characteristics of the device were studied and …