Quantum dot opto-electronic devices
P Bhattacharya, S Ghosh… - Annu. Rev. Mater …, 2004 - annualreviews.org
▪ Abstract Highly strained semiconductors grow epitaxially on mismatched substrates in the
Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of …
Stranski-Krastanow growth mode, wherein islands are formed after a few monolayers of …
[HTML][HTML] Edge emitting mode-locked quantum dot lasers
Edge-emitting mode-locked quantum-dot (QD) lasers are compact, highly efficient sources
for the generation of picosecond and femtosecond pulses and/or broad frequency combs …
for the generation of picosecond and femtosecond pulses and/or broad frequency combs …
[图书][B] Quantum wells, wires and dots: theoretical and computational physics of semiconductor nanostructures
P Harrison, A Valavanis - 2016 - books.google.com
Quantum Wells, Wires and Dots provides all the essential information, both theoretical and
computational, to develop an understanding of the electronic, optical and transport …
computational, to develop an understanding of the electronic, optical and transport …
Semiconductor quantum dots and related systems: electronic, optical, luminescence and related properties of low dimensional systems
AD Yoffe - Advances in physics, 2001 - Taylor & Francis
This review seeks to extend the scope of both the experimental and theoreticalwork carried
out since I completed my 1993 review on the electronic, optical, andto a lesser extent, the …
out since I completed my 1993 review on the electronic, optical, andto a lesser extent, the …
Electronic and optical properties of strained quantum dots modeled by 8-band k⋅ p theory
O Stier, M Grundmann, D Bimberg - Physical Review B, 1999 - APS
We present a systematic investigation of the elastic, electronic, and linear optical properties
of quantum dot double heterostructures in the frame of eight-band k⋅ p theory. Numerical …
of quantum dot double heterostructures in the frame of eight-band k⋅ p theory. Numerical …
Theory of pure dephasing and the resulting absorption line shape in semiconductor quantum dots
The pure dephasing of the optical polarization and the corresponding line shape of
absorption spectra in small quantum dots due to the interaction of the exciton both with …
absorption spectra in small quantum dots due to the interaction of the exciton both with …
Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximations
C Pryor - Physical Review B, 1998 - APS
The electronic structure of pyramidal shaped InAs/GaAs quantum dots is calculated using an
eight-band strain-dependent k⋅ p Hamiltonian. The influence of strain on band energies …
eight-band strain-dependent k⋅ p Hamiltonian. The influence of strain on band energies …
Facet engineering for amplified spontaneous emission in metal halide perovskite nanocrystals
Auger recombination and thermalization time are detrimental in reducing the gain threshold
of optically pumped semiconductor nanocrystal (NC) lasers for future on-chip nanophotonic …
of optically pumped semiconductor nanocrystal (NC) lasers for future on-chip nanophotonic …
Inverted electron-hole alignment in InAs-GaAs self-assembled quantum dots
PW Fry, IE Itskevich, DJ Mowbray, MS Skolnick… - Physical review …, 2000 - APS
New information on the electron-hole wave functions in InAs-GaAs self-assembled quantum
dots is deduced from Stark effect spectroscopy. Most unexpectedly it is shown that the hole …
dots is deduced from Stark effect spectroscopy. Most unexpectedly it is shown that the hole …
Comparison of two methods for describing the strain profiles in quantum dots
The electronic structure of interfaces between lattice-mismatched semiconductors is
sensitive to the strain. We compare two approaches for calculating such inhomogeneous …
sensitive to the strain. We compare two approaches for calculating such inhomogeneous …