Abstract Vertically integrated NAND (V‐NAND) flash memory is the main data storage in
modern handheld electronic devices, widening its share even in the data centers where …

This article proposes a variability-aware machine learning (ML) approach that predicts
variations in the key electrical parameters of 3-D NAND Flash memories. For the first time …

In this study, a cyclic isotropic plasma atomic layer etching (ALE) process was developed for
aluminum oxide that involves fluorination with NF 3 plasma and ligand exchange with …

The randomly fluctuating trap efficiency of taper-etched nanowire thin-film transistors was
investigated by measuring a very large statistical ensemble of three-dimensional NAND …

To achieve high density, the spacer length of three dimensional (3D) NAND device has
been scaled down. When the program/erase cycle repeats, problems such as electrons …

Minimizing the variation in threshold voltage (Vt) of programmed cells is required to the
extreme level for realizing multi-level-cells; as many as even 5 bits per cell recently. In this …

Since the most of three dimensional (3D) NAND devices' channel is composed of polysilicon
grain, the actual 3D NAND channel has a wave-shaped channel, not uniform shape. In this …

In flash memory technology, mechanical stress is considered as one of the major factors that
can influence the device performance. Furthermore, mechanical stress can have a greater …

The tapered channel effect is a major concern in three-dimensional (3-D) NAND technology
because the effect causes differences in the electrical characteristics, including the threshold …

Resistive random-access memory (RRAM) has garnered attention as a synaptic device for
neuromorphic systems. However, RRAM typically suffers from various issues, such as a high …