4,798,990 4,819,215 4,836,882 4,841,429 4,906,840 5,048,036 5,048,038 5,066,925
5,075,641 5,111,157 5,118,982 5,129,132 5,162,691 5,166,646 5,185.589 5,214,392 …

An acoustic resonator comprises a first electrode and second electrode comprising a
plurality of sides. At least one of the sides of the second electrode comprises a cantilevered …

A stacked bulk acoustic resonator includes a first piezoelectric layer stacked on a first
electrode, a second electrode stacked on the first piezoelectric layer; a second piezoelectric …

A bulk acoustic wave (BAW) resonator, comprises: a first electrode; a second electrode
comprising a plurality of sides. At least one of the sides comprises a cantilevered portion …

A bulk acoustic wave (BAW) structure includes a first electrode disposed over a substrate, a
piezoelectric layer disposed over the first electrode, and a second electrode disposed over …

In accordance with a representative embodiment, a bulk acoustic wave (BAW) resonator
structure, comprises: a first BAW resonator comprising a first lower electrode, a first upper …

A bulk acoustic wave (BAW) resonator device includes an acoustic reflector formed over a
substrate and a resonator stack formed over the acoustic reflector. The acoustic reflector …

Related US Application Data a continuation-in-part of application No. 13/074.262, filed on
Mar. 29, 2011, now Pat. No. 9,136,818, which is a continuation-in-part of application No …

A film bulk acoustic resonator (FBAR) structure includes a first electrode disposed over a
substrate, a piezoelectric layer disposed over the first electrode, and a second electrode …

In a representative embodiment, a bulk acoustic wave (BAW) resonator comprises: a cavity
provided in a first layer and having a perimeter bordering an active region of the BAW …