There is currently much activity toward the integration of mid-infrared semiconductor lasers
on Si substrates for developing a variety of smart, compact, sensors based on Si-photonics …

Solar energy conversion and photoinduced bioactive sensors are representing topical
scientific fields, where interfaces play a decisive role for efficient applications. The key to …

The formation and propagation of anti‐phase boundaries (APBs) in the epitaxial growth of III‐
V semiconductors on Silicon is still the subject of great debate, despite the impressive …

The direct epitaxial growth of III-V semiconductor lasers on standard, CMOS-compatible, on-
axis (001) Si substrates is actively sought for the realization of active photonic integrated …

The direct growth of III–V semiconductors on silicon holds tremendous potential for
photonics applications. However, the inherent differences in their properties lead to defects …

We report on the first single-junction GaSb solar cell epitaxially grown on a Si substrate. A
control stand-alone GaSb solar cell was primarily fabricated, which demonstrated a 5.90 …

Considerable efforts in search for an effective characterization technique for photovoltaic
devices with utmost precision is on the increase. For precise analysis and tailoring of device …

We investigated the preparation of single domain Ge (100): As surfaces in a metal-organic
vapor phase epitaxy reactor. In situ reflection anisotropy spectra (RAS) of vicinal substrates …

The complex interfacial structural issues associated with hetero-polar epitaxial integration of
GaP on Si (001) are resolved by improving the kinetics of gallium and phosphorous adatoms …

Abstract Effects of lattice and polar/nonpolar mismatch between the GaP layer and Ge (111)
substrate are investigated by spatially resolved Raman spectroscopy. The red shifted …