Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low-and high-energy electrons
Local lifetime control by proton and alpha-particle irradiation with energies from 1.8 to 12.1
MeV and doses up to 5× 1012cm− 2 was faced with two types of electron irradiation giving …
MeV and doses up to 5× 1012cm− 2 was faced with two types of electron irradiation giving …
Proton Irradiation‐Induced Displacement Damage in 650 V Si and SiC Power Diodes
A comparison of the displacement damage effects in Si and silicon carbide (4H‐SiC)
commercial diodes due to 6 MeV proton irradiation is presented. The devices chosen for this …
commercial diodes due to 6 MeV proton irradiation is presented. The devices chosen for this …
Lifetime control in silicon power PiN diode by ion irradiation: Suppression of undesired leakage
P Hazdra, V Komarnitskyy - Microelectronics journal, 2006 - Elsevier
The irradiation with high-energy (7.35 MeV) protons through a set of energy degraders was
used to suppress leakage of the silicon power diodes subjected to local lifetime control. The …
used to suppress leakage of the silicon power diodes subjected to local lifetime control. The …
Electrical properties of as-grown and proton-irradiated high purity silicon
J Krupka, W Karcz, P Kamiński, L Jensen - Nuclear Instruments and …, 2016 - Elsevier
The complex permittivity of as-grown and proton-irradiated samples of high purity silicon
obtained by the floating zone method was measured as a function of temperature at a few …
obtained by the floating zone method was measured as a function of temperature at a few …
Dark current spectroscopy on alpha irradiated pinned photodiode CMOS image sensors
JM Belloir, V Goiffon, C Virmontois… - … on Nuclear Science, 2016 - ieeexplore.ieee.org
Dark Current Spectroscopy is tested for the first time on irradiated CMOS Image sensors
(CIS) to detect and identify radiation-induced silicon bulk defects. Two different pinned …
(CIS) to detect and identify radiation-induced silicon bulk defects. Two different pinned …
Electrical properties of deuteron irradiated high resistivity silicon
J Krupka, W Karcz, SP Avdeyev, P Kamiński… - Nuclear Instruments and …, 2014 - Elsevier
We have investigated resistivity changes introduced on the high-resistivity p-type silicon
wafer by the irradiation with deuteron beam with an energy of 4.4 GeV performed in the …
wafer by the irradiation with deuteron beam with an energy of 4.4 GeV performed in the …
A Kinetic Monte Carlo Algorithm to Model the Annealing Process and Compute the Dark Current Nonuniformity
K Lemiere, C Inguimbert, T Nuns - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
A Kinetic Monte Carlo Algorithm to Model the Annealing Process and Compute the Dark Current
Nonuniformity Page 1 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 68, NO. 8 …
Nonuniformity Page 1 IEEE TRANSACTIONS ON NUCLEAR SCIENCE, VOL. 68, NO. 8 …
Radiation defect distribution in silicon irradiated with 600 keV electrons
P Hazdra, H Dorschner - Nuclear Instruments and Methods in Physics …, 2003 - Elsevier
Low-doped n-type float zone silicon was irradiated with 600 keV electrons to fluences from
2× 1013 to 1× 1015 cm− 2. Radiation defects, their introduction rates and full-depth profiles …
2× 1013 to 1× 1015 cm− 2. Radiation defects, their introduction rates and full-depth profiles …
Platinum in-diffusion controlled by radiation defects for advanced lifetime control in high power silicon devices
The low-temperature (∼ 700° C) in-diffusion of platinum (Pt) into the n-type float zone silicon
guided and enhanced by radiation damage produced by implantation of helium ions was …
guided and enhanced by radiation damage produced by implantation of helium ions was …
Radiation enhanced diffusion of implanted platinum in silicon guided by helium co-implantation for arbitrary control of platinum profile
The in-diffusion of platinum into a low-doped n-type float zone silicon guided and enhanced
by radiation damage produced by co-implantation of helium ions was investigated. The …
by radiation damage produced by co-implantation of helium ions was investigated. The …