For high electron mobility transistors (HEMTs) power transistors based on AlGaN/GaN
heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two …

Wide Band Gap (WBG) semiconductors have the potential to provide significant
improvements in energy efficiency over conventional silicon (Si) semiconductors. While the …

We investigated the temperature-dependent reverse characteristics (JR-VR-T) of vertical
GaN Schottky-barrier diodes with and without a fluorine-implanted edge termination (ET). To …

Abstract MOS High Electron Mobility Transistors (MOS-HEMTs) may suffer from V TH
instability and hysteresis reducing device performances. Post-Deposition Anneal (PDA) of …

Fluorine implantation has been reported to be effective in suppressing electric fields at the
edge of Schottky contacts in GaN due to the formation of fixed negative charged traps. In this …

In this paper, we study the effect of the gate morphology and the impact of the
crystallographic channel orientation on the on-state electrical performances of the GaN-on …

In this work, we investigate the impact of high-temperature Post-Deposition Annealing (PDA)
on Al 0.5 Si 0.5 O x deposited by Atomic Layer Deposition (ALD). Reversed hysteresis is …

In this paper, we proposed a novel recess-free insulated-gate High Electron Mobility
Transistor (HEMT) with p-SnO 2 gate realizing high threshold voltage (V TH) over 2 V. p-SnO …

In this work we present the effect of inductively coupled plasma reactive ion etching (ICP-
RIE) combined with atomic layer etching (ALE) on the Al 2 O 3/GaN interface for MOSc …

In this paper, we review the gate reliability of the GaN MOSc-HEMT as well as the specific
method to address the peculiarities of these transistors. The long term forward gate TDDB …