Predictive Modeling of Mixed Halide Perovskite Cell using Hybrid L27 OA Taguchi-based GA-MLR-GA Approach
KE Kaharudin, F Salehuddin - Jurnal Teknologi, 2022 - journals.utm.my
Perovskite photovoltaic cell is regarded as an alternative configuration for the conventional
photovoltaic cells predominantly due to its high efficiency. In this paper, a predictive …
photovoltaic cells predominantly due to its high efficiency. In this paper, a predictive …
Minimum leakage current optimization on 22 nm SOI NMOS device with HfO2/WSix/Graphene gate structure using Taguchi method.
AHA Maheran, EN Firhat, F Salehuddin… - Journal of Physics …, 2020 - iopscience.iop.org
To acquire the optimal value of the performance parameter, a bilayer graphene with silicon
on insulator (SOI) was enhanced and analyzed on 22 nm NMOS device. The device is made …
on insulator (SOI) was enhanced and analyzed on 22 nm NMOS device. The device is made …
[PDF][PDF] Optimization of 14nm Horizontal Double Gate for Optimum Threshold Voltage Using L9 Taguchi Method.
N Nizam, AM AH, F Salehuddin… - International …, 2022 - ijneam.unimap.edu.my
Silvaco ATHENA TCAD tools are used to model and simulate the electrical properties and
characterization of the suggested layout of a 14 nm gate length (Lg) Double Gate Bilayer …
characterization of the suggested layout of a 14 nm gate length (Lg) Double Gate Bilayer …
Impact of strained channel on electrical properties of Junctionless Double Gate MOSFET
KE Kaharudin, F Salehuddin, ASM Zain… - Journal of Physics …, 2020 - iopscience.iop.org
Application of strained channel in Metal-oxide-semiconductor Field Effect Transistors
(MOSFET) technology influences the electrical properties due to the significant changes in …
(MOSFET) technology influences the electrical properties due to the significant changes in …
Virtual fabrication in modelling 14 nm horizontal double gate bilayer graphene FET NMOS/PMOS
NH Naili, AH Afifah Maheran, F Salehuddin… - AIP Conference …, 2024 - pubs.aip.org
MOSFET has been the most widely utilized electronic appliance in integrated circuits (ICs)
since the beginning of the silicon-based semiconductor material (1970s). With the rapid …
since the beginning of the silicon-based semiconductor material (1970s). With the rapid …
[PDF][PDF] Modeling, estimation and reduction of total leakage in scaled CMOS logic circuits
N Sachdeva - 2021 - dspace-jcboseust.refread.com
Metal oxide semiconductor (MOSFET) is the most important promising building block of Very-
Large-Scale Integrated (VLSI) circuits due to its incomparable properties. Both the …
Large-Scale Integrated (VLSI) circuits due to its incomparable properties. Both the …